DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2355, 2SK2355-Z/2SK2356, 2SK2356-Z
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2355, 2SK2355-Z/2SK2356, 2SK2356-Z is N-Channel
MOS Field Effect Transistor designed for high voltage switching
applications.
3.0 ±0.3
PACKAGE DIMENSIONS
(in millimeter)
10.6 MAX.
3.6 ±0.2
10.0
4.8 MAX.
1.3 ±0.2
5.9 MIN.
1 2 3
•
Low On-Resistance
2SK2355: R
DS(on)
= 1.4
Ω
(V
GS
= 10 V, I
D
= 2.5 A)
2SK2356: R
DS(on)
= 1.5
Ω
(V
GS
= 10 V, I
D
= 2.5 A)
4
12.7 MIN. 15.5 MAX.
FEATURES
6.0 MAX.
•
Low C
iss
C
iss
= 670 pF TYP.
•
High Avalanche Capability Ratings
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 ˚C)
Drain to Source Voltage (2SK2355/2356)
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)*
Total Power Dissipation (T
c
= 25 ˚C)
Total Power Dissipation (T
a
= 25 ˚C)
Channel Temperature
Storage Temperature
Single Avalanche Current**
Single Avalanche Energy**
*
PW
≤
10
µ
s, Duty Cycle
≤
1 %
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
I
AS
E
AS
450/500
±30
±5.0
±20
50
1.5
150
5.0
17.4
V
V
A
A
W
1.3 ±0.2
0.75 ±0.1
2.54
0.5 ±0.2
2.8 ±0.2
2.54
1. Gate
2. Drain
3. Source
4. Fin (Drain)
JEDEC: TO-220AB
MP-25 (TO-220)
(10.0)
4.8 MAX.
1.3 ±0.2
1.5 MAX.
4
°C
A
mJ
–55 to +150
°C
1.0 ±0.5
W
1.4 ±0.2
1.0 ±0.3
(2.54) (2.54)
1 2 3
8.5 ±0.2
)
5R )
0. .8R
( 0
(
1.1 ±0.2
3.0 ±0.5
0.5 ±0.2
MP-25Z (TO-220 SURFACE MOUNT TYPE)
Drain
2.8 ±0.2
**
Starting T
ch
= 25 ˚C, R
G
= 25
Ω,
V
GS
= 20 V
→
0
1.
2.
3.
4.
Gate
Drain
Source
Fin (Drain)
Body
Diode
Gate
Source
The information in this document is subject to change without notice.
Document No. D11391EJ3V0DS00 (3rd edition)
(Previous No. TC-2500)
Date Published March 1998 N CP(K)
Printed in Japan
©
1994