DATA SHEET
MOS FIELD EFFECT TRANSISTORS
2SK2361/2SK2362
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2361/2SK2362 is N-Channel MOS Field Effect Transistor
designed for high voltage switching applications.
PACKAGE DIMENSIONS
(in millimeter)
4.7 MAX.
1.5
7.0
1.0±0.2
5.45
4.5±0.2
0.6±0.1
2.8±0.1
1. Gate
2. Drain
3. Source
4. Fin (Drain)
FEATURES
•
Low On-Resistance
2SK2361: R
DS (on)
= 0.9
Ω
(V
GS
= 10 V, I
D
= 5.0 A)
2SK2362: R
DS (on)
= 1.0
Ω
(V
GS
= 10 V, I
D
= 5.0 A)
1.0
15.7 MAX.
4
3.2±0.2
•
Low C
iss
C
iss
= 1050 pF TYP.
•
High Avalanche Capability Ratings
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 ˚C)
Drain to Source Voltage (2SK2361/2SK2362)
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)*
Total Power Dissipation (T
c
= 25 ˚C)
Total Power Dissipation (T
A
= 25 ˚C)
Channel Temperature
Storage Temperature
Single Avalanche Current**
Single Avalanche Energy**
*
PW
≤
10
µ
s, Duty Cycle
≤
1 %
V
DSS
V
GSS
I
D (DC)
I
D (pulse)
P
T1
P
T2
T
ch
T
stg
I
AS
E
AS
450/500
±30
±10
±40
100
3.0
150
10
142
V
V
A
A
W
W
˚C
20.0±0.2
6.0
1
19 MIN.
3.0±0.2
2
3
2.2±0.2
5.45
MP-88
Drain
–55 to +150 ˚C
A
mJ
Gate
Body
Diode
**
Starting T
ch
= 25 ˚C, R
G
= 25
Ω,
V
GS
= 20 V
→
0
Source
Document No. TC-2502
(O. D. No. TC-8061)
Date Published December 1994 P
Printed in Japan
©
1995
NEC [ NEC ]
