DATA SHEET
MOS FIELD EFFECT TRANSISTORS
2SK2365/2SK2366
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2365, 2SK2365-Z/2SK2366, 2SK2366-Z is N-Channel
MOS Field Effect Transistor designed for high voltage switching
3.0 ± 0.3
PACKAGE DIMENSIONS
(in millimeters)
10.6 MAX.
3.6 ± 0.2
10.0
5.9 MIN.
12.7 MIN. 15.5 MAX.
applications.
4.8 MAX.
1.3 ± 0.2
FEATURES
•
Low On-Resistance
2SK2365: R
DS(on)
= 0.5
Ω
(V
GS
= 10 V, I
D
= 5.0 A)
2SK2366: R
DS(on)
= 0.6
Ω
(V
GS
= 10 V, I
D
= 5.0 A)
4
1 2 3
•
Low C
iss
C
iss
= 1 600 pF TYP
.
•
High Avalanche Capability Ratings
•
Isolate TO-220 Package
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 ˚C)
Drain to Source Voltage (2SK2365/2SK2366)
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)*
Total Power Dissipation (T
c
= 25 ˚C)
Total Power Dissipation (T
A
= 25 ˚C)
Channel Temperature
Storage Temperature
Single Avalanche Current**
Single Avalanche Energy**
*
PW
≤
10
µ
s, Duty Cycle
≤
1 %
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
I
AS
E
AS
450/500
±30
±10
±40
75
1.5
150
10
143
V
V
A
A
W
W
˚C
A
mJ
6.0 MAX.
1.3 ± 0.2
0.75 ± 0.1
2.54
0.5 ± 0.2
2.8 ± 0.2
2.54
1. Gate
2. Drain
3. Source
4. Fin (Drain)
JEDEC: TO-220AB
MP-25 (TO-220)
(10.0)
4
1.0 ± 0.5
8.5 ± 0.2
1.5 MAX.
4.8 MAX.
1.3 ± 0.2
1.4 ± 0.2
–55 to +150 ˚C
1.0 ± 0.3
(2.54) (2.54)
1 2 3
1.1 ± 0.4
3.0 ± 0.5
R) )
.5 8R
(0 0.
(
0.5 ± 0.2
**
Starting T
ch
= 25 ˚C, R
G
= 25
Ω,
V
GS
= 20 V
→
0
2.8 ± 0.2
1.
2.
3.
4.
Gate
Drain
Source
Fin (Drain)
MP-25Z (SURFACE MOUNT TYPE)
Drain
Body
Diode
Gate
Source
Document No. TC-2503
(O. D. No. TC-8062)
Date Published February 1995 P
Printed in Japan
©
1995