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2SK2369 参数 Datasheet PDF下载

2SK2369图片预览
型号: 2SK2369
PDF下载: 下载PDF文件 查看货源
内容描述: 切换N沟道功率MOS FET工业用 [SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE]
分类和应用: 晶体晶体管功率场效应晶体管开关脉冲局域网
文件页数/大小: 8 页 / 114 K
品牌: NEC [ NEC ]
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DATA SHEET
MOS FIELD EFFECT TRANSISTORS
2SK2369/2SK2370
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2369/2SK2370 is N-Channel MOS Field Effect Transis-
tor designed for high voltage switching applications.
PACKAGE DIMENSIONS
(in millimeters)
φ
3.0 ± 0.2
1.0
15.7 MAX
4
4.7 MAX.
1.5
FEATURES
Low On-Resistance
2SK2370: R
DS(on)
= 0.4
(V
GS
= 10 V, I
D
= 10 A)
20.0 ± 0.2
Low C
iss
C
iss
= 2400 pF TYP
.
High Avalanche Capability Ratings
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 ˚C)
Drain to Source Voltage(2SAK2369/2370) V
DSS
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)*
Total Power Dissipation (T
c
= 25 ˚C)
Total Power Dissipation (T
A
= 25 ˚C)
Channel Temperature
Storage Temperature
Single Avalanche Current**
Single Avalanche Energy**
*
PW
10
µ
s, Duty Cycle
1 %
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
I
AS
E
AS
450/500
±30
±20
±80
140
3.0
150
20
285
V
V
A
A
W
W
˚C
A
mJ
1
2
3
19 MIN.
3.0 ± 0.2
2.2 ± 0.2
5.45
1.0 ± 0.2
5.45
4.5 ± 0.2
6.0
0.6 ± 0.1
1. Gate
2. Drain
3. Source
4. Fin (Drain)
–55 to +150 ˚C
MP-88
Drain
**
Starting T
ch
= 25 ˚C, R
G
= 25
Ω,
V
GS
= 20 V
0
Body
Diode
Gate
Source
Document No. TC-2507
(O. D. No. TC-8066)
Date Published January 1995 P
Printed in Japan
©
7.0
2.8 ± 0.1
2SK2369: R
DS(on)
= 0.35
(V
GS
= 10 V, I
D
= 10 A)
1995