DATA SHEET
MOS FIELD EFFECT TRANSISTORS
2SK2371/2SK2372
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2371/2SK2372 is N-Channel MOS Field Effect Transistor
designed for high voltage switching applications.
PACKAGE DIMENSIONS
(in millimeters)
FEATURES
• Low On-Resistance
20.0 ± 0.2
1.0
15.7 MAX.
4
3.2 ± 0.2
4.7 MAX.
1.5
7.0
2SK2368: R
DS(ON)
= 0.27
Ω
(V
GS
= 13 V, I
D
= 10 A)
• Low C
iss
C
iss
= 3600 pF TYP.
• High Avalanche Capability Ratings
1
3.0 ± 0.2
2
3
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°C)
Drain to Source Voltage (2SK2371/2SK2372) V
DSS
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)*
Total Power Dissipation (T
C
= 25
°C)
Total Power Dissipation (T
a
= 25
°C)
Channel Temperature
Storage Temperature
Single Avalanche Current**
Single Avalanche Energy**
* PW
≤
10
µ
s, Duty Cycle
≤
1 %
** Starting T
ch
= 25
°C,
R
G
= 25
Ω,
V
GS
= 20 V
→
0
19 MIN.
450/500
±30
±25
±100
160
3.0
150
–55 ~ +150
25
446
V
V
A
A
W
W
°C
°C
A
mJ
2.2 ± 0.2
5.45
1.0 ± 0.2
5.45
4.5 ± 0.2
2SK2367: R
DS(ON)
= 0.25
Ω
(V
GS
= 13 V, I
D
= 10 A)
6.0
0.6 ± 0.1
2.8 ± 0.1
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
I
AS
E
AS
MP-88
1. Gate
2. Drain
3. Source
4. Fin (Drain)
Drain
Gate
Body
Diode
The diode connected between the gate and source of the transistor
serves as a protector against ESD. When this device is actually used,
an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
Source
Document No. TC-2505
(O.D. No. TC-8064
Date Published January 1995 P
Printed in Japan
©
1995
NEC [ NEC ]
