DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2412
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2412 is N-Channel MOS Field Effect Transistor de-
signed for high speed switching applications.
PACKAGE DIMENSIONS
(in millimeters)
10.0 ±0.3
4.5 ±0.2
3.2 ±0.2
2.7 ±0.2
FEATURES
•
Low On-Resistance
R
DS(on)1
= 70 mΩ MAX. (@ V
GS
= 10 V, I
D
= 10 A)
15.0 ±0.3
3 ±0.1
4 ±0.2
12.0 ±0.2
13.5
MIN.
R
DS(on)2
= 95 mΩ MAX. (@ V
GS
= 4 V, I
D
= 10 A)
•
Low C
iss
C
iss
= 860 pF TYP.
•
Built-in G-S Gate Protection Diodes
•
High Avalanche Capability Ratings
QUALITY GRADE
Standard
Please refer to "Quality grade on NEC Semiconductor Devices" (Document
number IEI-1209) published by NEC Corporation to know the
specification of quality grade on the devices and its recommended
applications.
0.7 ±0.1
2.54
1.3 ±0.2
1.5 ±0.2
2.54
0.65 ±0.1
2.5 ±0.1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 ˚C)
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)*
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
60
±20
±20
±80
30
2.0
150
20
22.5
V
V
A
A
W
W
˚C
A
mJ
Gate
1 2 3
1. Gate
2. Drain
3. Source
MP-45F(ISOLATED TO-220)
Drain
Total Power Dissipation (T
c
= 25 ˚C) P
T1
Total Power Dissipation (T
A
= 25 ˚C) P
T2
Channel Temperature
Storage Temperature
Single Avalanche Current**
Single Avalanche Energy**
*
PW
≤
10
µ
s, Duty Cycle
≤
1 %
T
ch
T
stg
I
AS
E
AS
–55 to +150 ˚C
Body
Diode
Gate Protection
Diode
Source
**
Starting T
ch
= 25 ˚C, R
G
= 25
Ω,
V
GS
= 20 V
→
0
The information in this document is subject to change without notice.
Document No. TC-2493
(O. D. No. TC-8031)
Date Published November 1994 P
Printed in Japan
©
1994
NEC [ NEC ]
