DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2476
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2476 is N-Channel MOS Field Effect Transistor designed
for high voltage switching applications.
PACKAGE DIMENSIONS
(in millimeter)
FEATURES
•
Low On-Resistance
R
DS (on)
= 5.0
Ω
(V
GS
= 10 V, I
D
= 2.0 A)
10.0±0.3
3.2±0.2
4.5±0.2
2.7±0.2
15.0±0.3
3±0.1
4±0.2
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 ˚C)
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)*
Total Power Dissipation (T
c
= 25 ˚C)
Total Power Dissipation (T
A
= 25 ˚C)
Channel Temperature
Storage Temperature
Single Avalanche Current**
Single Avalanche Energy**
*
PW
≤
10
µ
s, Duty Cycle
≤
1 %
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
I
AS
E
AS
800
±30
±3.0
±9.0
40
2.0
150
3.0
37.8
V
V
A
A
W
W
˚C
A
mJ
1 2 3
0.7±0.1
2.54
1.3±0.2
1.5±0.2
2.54
13.5MIN.
12.0±0.2
•
Low C
iss
C
iss
= 590 pF TYP.
•
High Avalanche Capability Ratings
•
Isolated TO-220 Package
2.5±0.1
0.65±0.1
1. Gate
2. Drain
3. Source
–55 to +150 ˚C
**
Starting T
ch
= 25 ˚C, R
G
= 25
Ω,
V
GS
= 20 V
→
0
MP-45F (ISOLATED TO-220)
Drain
Body
Diode
Gate
Source
Document No. D10268EJ1V0DS00 (1st edition)
Date Published August 1995 P
Printed in Japan
©
1995
NEC [ NEC ]
