DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2479
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2479 is N-Channel MOS Field Effect Transistor de-
signed for high voltage switching applications.
3.0 ± 0.3
PACKAGE DIMENSIONS
(in millimeters)
10.6 MAX.
3.6 ± 0.2
10.0
5.9 MIN.
12.7 MIN. 15.5 MAX.
4.8 MAX.
1.3 ± 0.2
FEATURES
•
Low On-Resistance
R
DS(on)
= 7.5
Ω
(V
GS
= 10 V, I
D
= 2.0 A)
6.0 MAX.
•
Low C
iss
C
iss
= 485 pF TYP
.
•
High Avalanche Capability Ratings
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 ˚C)
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)*
Total Power Dissipation (T
c
= 25 ˚C)
Total Power Dissipation (T
A
= 25 ˚C)
Channel Temperature
Storage Temperature
Single Avalanche Current**
Single Avalanche Energy**
*
PW
≤
10
µ
s, Duty Cycle
≤
1 %
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
I
AS
E
AS
900
±30
±3.0
±8.0
70
1.5
150
3.0
5.4
V
V
A
A
W
W
˚C
A
mJ
4
1 2 3
1.3 ± 0.2
0.75 ± 0.1
2.54
0.5 ± 0.2
2.8 ± 0.2
2.54
1. Gate
2. Drain
3. Source
4. Fin (Drain)
JEDEC: TO-220AB
MP-25 (TO-220)
Drain
–55 to +150 ˚C
Body
Diode
Gate
**
Starting T
ch
= 25 ˚C, R
G
= 25
Ω,
V
GS
= 20 V
→
0
Source
Document No. D10271EJ1V0DS00 (1st edition)
Date Published August 1995 P
Printed in Japan
©
1995