DATA SHEET
MOS FIELD EFFECT TRANSISTORS
2SK2941
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
This product is n-Chanel MOS Field Effect Transistor designed high
current switching application.
PACKAGE DIMENSIONS
inmillimeters
3.0±0.3
FEATURE
• Low On-Resistance
R
DS(on)1
= 14 mΩ Typ. (V
GS
= 10 V, I
D
=18 A)
R
DS(on)2
= 22 mΩ Typ. (V
GS
= 4 V, I
D
= 18 A)
• Low C
iss
C
iss
= 1250 pF Typ.
10.6 MAX.
3.6±0.2
10.0
5.9 MIN.
12.7 MIN. 15.5 MAX.
4.8 MAX.
1.3±0.2
4
1 2 3
1.3±0.2
6.0 MAX.
• Built-in G-S Protection Diode
0.5±0.2
2.8±0.2
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 ˚C)
Maximum Voltages and Currents
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)*
Maximum Power Dissipation
Total Power Dissipation (T
A
= 25 ˚C)
Total Power Dissipation (T
C
= 25 ˚C)
Maximum Temperature
Channel Temperature
Storage Temperature
* PW
≤
10
µ
s, Duty Cycle
≤
1%
T
ch
T
stg
150
–55 to + 125
˚C
˚C
P
T
P
T
1.5
60
W
W
V
DSS
V
GSS
I
D(DC)
I
D(Pulse
)
30
±20
±35
±140
V
V
A
A
0.75±0.1
2.54
2.54
1. Gate
2. Drain
3. Source
4. Fin (Drain)
JEDEC: TO-220AB
MP-25 (TO-220)
Drain
Gate
Dody
Diode
Gate Protection
Diode
Source
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device
acutally used, an addtional protection circuit is externally required if voltage exeeding the rated voltage may be applied to
this device.
The information in this document is subject to change without notice.
Document No. D11007EJ1V0DS00 (1st edition)
Date Published May 1997 N
©
1997
NEC [ NEC ]
