2SK2984 参数 Datasheet PDF下载

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SK2984

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

DESCRIPTION

This product is N-Channel MOS Field Effect Transistor designed for high current switching application.

FEATURES

•

Low on-resistance

R

DS(on)1

= 10 mΩ

(MAX.)

(V

GS

= 10 V, I

D

= 20 A)

R

DS(on)2

= 15 mΩ

(MAX.)

(V

GS

= 4.5 V, I

D

= 20 A)

•

Low C

iss

C

iss

= 2850 pF TYP.

•

Built-in gate protection diode

ORDERING INFORMATION

PART NUMBER

2SK2984

2SK2984-S

2SK2984-ZJ

PACKAGE

TO-220AB

TO-262

TO-263

ABSOLUTE MAXIMUM RATINGS (T

A

= 25 °C)

Drain to Source Voltage

Gate to Source Voltage

Drain Current (DC)

Drain Current (pulse)

Note3

Note1

V

DSS

V

GSS

I

D(DC)

I

D(pulse)

P

T

P

T

T

ch

T

stg

30

±20

±40

±160

1.5

60

150

−55

to +150

V

V

A

A

W

W

°C

°C

Note2

Total Power Dissipation (T

A

= 25°C)

Total Power Dissipation (T

c

= 25°C)

Channel Temperature

Storage Temperature

Notes.1

V

GS

= 0 V

2

V

DS

= 0 V

3

PW

≤

10

µ

s, Duty Cycle

≤

1 %

.

The information in this document is subject to change without notice.

Document No. D12356EJ1V0DS00 (1st edition)

Date Published October 1998 NS CP (K)

Printed in Japan

©

1998