DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3115
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK3115 is N-Channel DMOS FET device that features a low gate charge and excellent switching haracteristics, and
designed for high voltage applications such as switching power supply, AC adapter.
FEATURES
•
Low gate charge
Q
G
= 26 nC TYP. (V
DD
= 450 V, V
GS
= 10 V, I
D
= 6.0 A)
•
Gate voltage rating
±30
V
•
Low on-state resistance
R
DS(on)
= 1.2
Ω
MAX. (V
GS
= 10 V, I
D
= 3.0 A)
•
Avalanche capability ratings
ORDERING INFORMATION
PART NUMBER
2SK3115
PACKAGE
Isolated TO-220
5
(Isolated TO-220)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
600
±30
±6.0
±24
2.0
35
150
−55
to +150
6.0
24
V
V
A
A
W
W
°C
°C
A
mJ
Total Power Dissipation (T
A
= 25°C)
Total Power Dissipation (T
C
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Note2
Note2
I
AS
E
AS
Notes 1.
PW
≤
10
µ
s, Duty Cycle
≤
1%
2.
Starting T
ch
= 25°C, V
DD
= 150 V, R
G
= 25
Ω,
V
GS
= 20
→
0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D13338EJ2V0DS00 (2nd edition)
Date Published January 2001 NS CP (K)
Printed in Japan
The mark
5
shows major revised points.
©
1998, 2001
NEC [ NEC ]
