DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3116
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3116 is N-channel DMOS FET device that features a
low gate charge and excellent switching characteristics, and
designed for high voltage applications such as switching power
supply, AC adapter.
ORDERING INFORMATION
PART NUMBER
2SK3116
2SK3116-S
2SK3116-ZJ
PACKAGE
TO-220AB
TO-262
TO-263
FEATURES
•Low
gate charge
Q
G
= 26 nC TYP. (I
D
= 7.5 A, V
DD
= 450 V, V
GS
= 10 V)
•Gate
voltage rating
±30
V
•Low
on-state resistance
R
DS(on)
= 1.2
Ω
MAX. (V
GS
= 10 V, I
D
= 3.75 A)
•Avalanche
capability ratings
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°C
)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC)
Drain Current (pulse)
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
600
±30
±7.5
±30
1.5
70
150
−55
to +150
7.5
37.5
3.5
V
V
A
A
W
W
°C
°C
A
mJ
V/ns
Total Power Dissipation (T
A
= 25°C)
Total Power Dissipation (T
C
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Diode Recovery dv/dt
Note2
Note2
I
AS
E
AS
dv/dt
Note3
Notes 1.
PW
≤
10
µ
s, Duty Cycle
≤
1%
2.
Starting T
ch
= 25°C, V
DD
= 150 V, R
G
= 25
Ω
, V
GS
= 20
→
0 V
3.
I
F
≤
3.0 A, V
clamp
= 600 V, di/dt
≤
100 A/
µ
s, T
A
= 25°C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D13339EJ2V0DS00 (2nd edition)
Date Published May 2002 NS CP (K)
Printed in Japan
The mark
5
shows major revised points.
©
1998
NEC [ NEC ]
