2SK3299
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
10
3.0
2.0
I
D
= 10 A
5.0 A
V
GS = 10 V
0 V
1
1.0
0
0.1
V
GS = 10 V
Pulsed
Pulsed
1.5
0.01
−50
0
50
100
150
0
0.5
1.0
T
ch - Channel Temperature - ˚C
V
SD - Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
SWITCHING CHARACTERISTICS
10000
1000
100
10
100
10
1
td(off)
t
f
td(on)
C
iss
t
r
Coss
Crss
V
DD = 150 V
GS = 10 V
= 10 Ω
V
GS= 0 V
V
R
G
f=1 MHz
0.1
0.1
1
1
10
100
0.1
1
10
100
1000
ID - Drain Current - A
V
DS - Drain to Source Voltage - V
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
16
800
600
400
200
0
10
1
µ
di/dt = 50 A/ s
V
GS = 0 V
14
12
10
8
µ
V
DD = 450 V
300 V
150 V
V
GS
6
0.1
4
2
V
DS
ID = 10 A
0
0.01
0
10
20
30
40
0.1
1
10
100
Q
G - Gate Charge - nC
I
D - Drain Current - A
4
Data Sheet D14060EJ1V0DS00
NEC [ NEC ]
