DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3304
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK3304 is N-Channel MOS FET device that features a
Low gate charge and excellent switching characteristics, and
designed for high voltage applications such as switching
power supply.
ORDERING INFORMATION
PART NUMBER
2SK3304
PACKAGE
TO-3P
FEATURES
•
Low gate charge :
Q
G
= 44 nC TYP. (V
DD
= 450 V, V
GS
= 10 V, I
D
= 7.0 A)
•
Gate voltage rating : ±30 V
•
Low on-state resistance :
R
DS(on)
= 2.0
Ω
MAX. (V
GS
= 10 V, I
D
= 4.0 A)
•
Avalanche capability ratings
(TO-3P)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C)
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Note1
V
DSS
V
GSS(AC)
I
D(DC)
I
D(pulse)
P
T
P
T
T
stg
Note2
Note2
900
±30
±7
±21
130
3.0
–55 to + 150
7
147
V
V
A
A
W
W
°C
A
mJ
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation (T
A
= 25°C)
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
I
AS
E
AS
Notes 1.
PW
≤
10
µ
s, Duty cycle
≤
1 %
2.
Starting T
ch
= 25°C, V
DD
= 150 V, R
G
= 25
Ω,
V
GS
= 20 V
→
0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
D13992EJ1V0DS00 (1st edition)
Date Published June 2000 NS CP(K)
Printed in Japan
©
2000
NEC [ NEC ]
