DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3324
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK3324 is N-Channel MOS FET device that features a
Low gate charge and excellent switching characteristics, and
Designed for high voltage applications such as switching
power supply, AC adapter.
ORDERING INFORMATION
PART NUMBER
2SK3324
PACKAGE
TO-3P
FEATURES
•
Low gate charge :
Q
G
= 32 nC TYP. (V
DD
= 450 V, V
GS
= 10 V, I
D
= 6.0 A)
•
Gate voltage rating : ±30 V
•
Low on-state resistance :
R
DS(on)
= 2.8
Ω
MAX. (V
GS
= 10 V, I
D
= 3.0 A)
•
Avalanche capability ratings
(TO-3P)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C)
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Note1
V
DSS
V
GSS(AC)
I
D(DC)
I
D(pulse)
P
T
P
T
T
stg
Note2
Note2
900
±30
±6
±18
120
3.0
–55 to + 150
6.0
21.6
V
V
A
A
W
W
°C
A
mJ
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation (T
A
= 25°C)
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
I
AS
E
AS
Notes 1.
PW
≤
10
µ
s, Duty cycle
≤
1 %
2.
Starting T
ch
= 25 °C, V
DD
= 150 V, R
G
= 25
Ω,
V
GS
= 20 V
→
0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
D14203EJ2V0DS00 (2nd edition)
Date Published January 2000 NS CP(K)
Printed in Japan
The mark
•
shows major revised points.
©
1999