DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3357
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
ORDERING INFORMATION
PART NUMBER
2SK3357
PACKAGE
TO-3P
DESCRIPTION
The 2SK3357 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
•
Super low on-state resistance:
R
DS(on)1
= 5.8 mΩ MAX. (V
GS
= 10 V, I
D
= 38 A)
R
DS(on)2
= 8.8 mΩ MAX. (V
GS
= 4.0 V, I
D
= 38 A)
•
Low C
iss
: C
iss
= 9800 pF TYP.
•
Built-in gate protection diode
(TO-3P)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)
Note1
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Note2
Single Avalanche Energy
Note2
V
DSS
V
GSS(AC)
I
D(DC)
I
D(pulse)
P
T
P
T
T
ch
T
stg
I
AS
E
AS
60
±20
±75
±300
150
3.0
150
–55 to +150
75
562
V
V
A
A
W
W
°C
°C
A
mJ
Notes 1.
PW
≤
10
µ
s, Duty cycle
≤
1 %
2.
Starting T
ch
= 25°C, R
G
= 25
Ω,
V
GS
= 20 V
→
0 V
THERMAL RESISTANCE
Channel to Case
Channel to Ambient
R
th(ch-C)
R
th(ch-A)
0.83
41.7
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
D14134EJ2V0DS00 (2nd edition)
Date Published May 2000 NS CP(K)
Printed in Japan
The mark
5
shows major revised points.
©
1999, 2000
NEC [ NEC ]
