PRELIMINARY DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3435
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
ORDERING INFORMATION
PART NUMBER
2SK3435
2SK3435-S
2SK3435-Z
PACKAGE
TO-220AB
TO-262
TO-220SMD
DESCRIPTION
The 2SK3435 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
•
Super low on-state resistance:
R
DS(on)1
= 14 mΩ MAX. (V
GS
= 10 V, I
D
= 40 A)
5
R
DS(on)2
= 22 mΩ MAX. (V
GS
= 4.0 V, I
D
= 40 A)
•
Built-in gate protection diode
(TO-220AB)
5
•
Low C
iss
: C
iss
= 3200 pF TYP.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
P
T
T
ch
T
stg
I
AS
E
AS
60
±20
±80
±320
84
1.5
150
–55 to +150
31
96
V
V
A
A
W
W
°C
°C
A
mJ
(TO-262)
5
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
5
5
Single Avalanche Current
Note2
Single Avalanche Energy
Note2
Notes 1.
PW
≤
10
µ
s, Duty cycle
≤
1 %
2.
Starting T
ch
= 25 °C, R
G
= 25
Ω,
V
GS
= 20 V
→
0 V
(TO-220SMD)
THERMAL RESISTANCE
5
Channel to Case
Channel to Ambient
R
th(ch-C)
R
th(ch-A)
1.49
83.3
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
D14604EJ1V0DS00 (1st edition)
Date Published March 2000 NS CP(K)
Printed in Japan
The mark
5
shows major revised points.
©
1999, 2000
NEC [ NEC ]
