DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3467
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK3467 is N-Channel MOS FET device that features a
low on-state resistance and excellent switching characteristics,
designed for low voltage high current applications such as
DC/DC converter with synchronous rectifier.
ORDERING INFORMATION
PART NUMBER
2SK3467
2SK3467-ZK
PACKAGE
TO-220AB
TO-263(MP-25ZK)
FEATURES
•
4.5 V drive available
•
Low on-state resistance
R
DS(on)1
= 6.0 mΩ MAX. (V
GS
= 10 V, I
D
= 40 A)
•
Low gate charge
Q
G
= 55 nC TYP. (I
D
= 80 A, V
DD
= 16 V, V
GS
= 10 V)
•
Built-in gate protection diode
•
Surface mount device available
(TO-220AB)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°C
)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (Pulse)
Note
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
20
±20
±80
±320
1.5
76
150
−55
to +150
V
V
A
A
W
W
°C
°C
(TO-263)
Total Power Dissipation (T
A
= 25°C)
Total Power Dissipation (T
C
= 25°C)
Channel Temperature
Storage Temperature
Note
PW
≤
10
µ
s, Duty Cycle
≤
1%
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
D14991EJ1V0DS00 (1st edition)
Date Published March 2001 NS CP(K)
Printed in Japan
©
2001
NEC [ NEC ]
