DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3918
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3918 is N-channel MOS FET device that
features a low on-state resistance and excellent switching
characteristics, and designed for low voltage high current
applications such as DC/DC converter with synchronous
rectifier.
ORDERING INFORMATION
PART NUMBER
2SK3918
2SK3918-ZK
PACKAGE
TO-251 (MP-3)
TO-252 (MP-3ZK)
FEATURES
•
Low on-state resistance
R
DS(on)1
= 7.5 mΩ MAX. (V
GS
= 10 V, I
D
= 24 A)
•
Low C
iss
: C
iss
= 1300 pF TYP.
•
5 V drive available
(TO-251)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note1
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation
Channel Temperature
Storage Temperature
Single Avalanche Current
Note2
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
I
AS
E
AS
25
±20
±48
±192
29
1.0
150
−55
to +150
22
48
V
V
A
A
W
W
°C
°C
A
mJ
(TO-252)
Single Avalanche Energy
Note2
Notes 1.
PW
≤
10
µ
s, Duty Cycle
≤
1%
2.
Starting T
ch
= 25°C, V
DD
= 12.5 V, R
G
= 25
Ω,
V
GS
= 20
→
0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D17077EJ3V0DS00 (3rd edition)
Date Published January 2005 NS CP(K)
Printed in Japan
The mark
shows major revised points.
2004
NEC [ NEC ]
