PRELIMINARY DATA SHEET
Hetero Junction Field Effect transistor
NE38018
L to S BAND LOW NOISE AMPLIFER
N-CHANNEL HJ-FET
FEATURES
Super Low noise figure & High Associated Gain
NF = 0.55 dB typ. Ga = 14.5 dB typ. OIP
3
= 22 dBm (V67), OIP
3
= 23 dBm (V68) typ. at f = 2 GHz
NF = 0.4 dB typ. Ga = 20 dB typ. at f = 900 MHz
4 pins super mini mold package
Wg = 800
µ
m
ORDERING INFORMATION (PLAN)
Part Number
NE38018-T1
Quantity
3 kpcs/Reel.
Packing Style
Embossed tape 8 mm wide.
Pin3 (Source), Pin4 (Drain) face to perforation side of the tape.
NE38018-T2
3 kpcs/Reel.
Embossed tape 8 mm wide.
Pin1 (Source), Pin2 (Gate) face to perforation side of the tape.
Remark
Please contact with responsible NEC person, if you require evaluation sample.
(Part number for sample order: NE38018)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Current
Total Power Temperature
Channel Temperature
Storage Temperature
Symbol
V
DS
V
GS
I
D
I
G
P
tot
T
ch
T
stg
Ratings
4.0
–3.0
I
DSS
100
150
125
–65 to +125
Unit
V
V
mA
µ
A
mA
°C
°C
RECOMMENDED OPERATING CONDITIONS (T
A
= 25°C)
Parameter
Drain to Source Voltage
Drain Current
Input Power
Symbol
V
DS
I
D
P
in
MIN.
1
2
–
TYP.
2
5
–
MAX.
3
30
0
Unit
V
mA
dBm
The information in this document is subject to change without notice.
Document No. P13494EJ1V0DS00 (1st edition)
Date Published August 1998 N CP(K)
Printed in Japan
©
1998
NEC [ NEC ]
