DATA SHEET
GaAs MES FET
NE72218
C to X BAND AMPLIFIER
C to X BAND OSC
N-CHANNEL GaAs MES FET
FEATURES
• High power gain in C to X band: G
S
= 4.5 dB TYP. @ f = 12 GHz
• Gate length
• Gate width
• 4-pin super minimold package
• Tape & reel packaging only available
: L
g
= 0.8
µ
m
: W
g
= 400
µ
m
ORDERING INFORMATION
Part Number
NE72218-T1
Package
4-pin super minimold
Supplying Form
•
8 mm wide embossed taping
•
Pin 3 (Source), Pin 4 (Drain) face the perforation side of the tape
•
Qty 3 kpcs/reel
•
8 mm wide embossed taping
•
Pin 1 (Source), Pin 2 (Gate) face the perforation side of the tape
•
Qty 3 kpcs/reel
NE72218-T2
Remark
To order evaluation samples, consult your NEC sales representative (Part number for sample order:
NE72218).
ABSOLUTE MAXIMUM RATINGS (T
A
= +25
°
C)
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Total Power Dissipation
Channel Temperature
Storage Temperature
Symbol
V
DS
V
GS
I
D
P
tot
T
ch
T
stg
Ratings
5.0
−5.0
I
DSS
250
125
−65
to +125
Unit
V
V
mA
mW
°C
°C
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P12750EJ3V0DS00 (3rd edition)
Date Published August 2000 NS CP(K)
Printed in Japan
The mark
•
shows major revised points.
©
1997, 2000
NEC [ NEC ]
