DATA SHEET
SILICON TRANSISTOR ARRAY
µ
PA1436A
NPN SILICON POWER TRANSISTOR ARRAY
HIGH SPEED SWITCHING USE (DARLINGTON TRANSISTOR)
INDUSTRIAL USE
DESCRIPTION
The
µ
PA1436A is NPN silicon epitaxial Darlington
Power Transistor Array that built in 4 circuits designed
for driving solenoid, relay, lamp and so on.
26.8 MAX.
4.0
PACKAGE DIMENSION
(in millimeters)
FEATURES
•
•
•
•
Easy mount by 0.1 inch of terminal interval.
High h
FE
for Darlington Transistor.
High Speed Switching.
C-E Reverce Diode built in.
10
2.54
ORDERING INFORMATION
Part Number
Package
10 Pin SIP
Quality Grade
Standard
1.4
0.6 ±0.2
1.4
0.5 ±0.2
µ
PA1436AH
1 2 3 4 5 6 7 8 910
CONNECTION DIAGRAM
Please refer to “Quality grade on NEC Semiconductor
Device” (Document number IEI-1209) published by NEC
Corporation to know the specification of quality grade on
the devices and its recommended applications.
2
1
4
6
8
10
3
5
7
9
ABSOLUTE MAXIMUM RATINGS (T
a
= 25 ˚C)
Collector to Base Voltage
Emitter to Base Voltage
Collector Current (DC)
Collector Current (pulse)
Base Current (DC)
Total Power Dissipation
(T
a
= 25 ˚C)
Total Power Dissipation
(T
c
= 25 ˚C)
Junction Temperature
Storage Temperature
**
4 Circuits
T
j
T
stg
150
–55 to +150
˚C
˚C
P
T2
**
28
W
V
CBO
V
EBO
I
C(DC)
I
C(pulse)
*
I
B(DC)
P
T1
**
150
100
8
±3
±5
0.3
3.5
V
V
V
A/unit
A/unit
A/unit
W
(B)
Collector to Emitter Voltage V
CEO
(C)
R
1
R
2
(E)
PIN NO.
2, 4, 6, 8: Base (B)
3, 5, 7, 9: Collector (C)
1, 10: Emitter (E)
.. 5 kΩ
R
1
=
..
R
2
= 1.3 kΩ
*
PW
≤
350
µ
s, Duty Cycle
≤
2 %
The information in this document is subject to change without notice.
Document No. IC-3482
(O.D. No. IC-8705)
Date Published September 1994 P
Printed in Japan
©
10 MIN.
2.5
1994
NEC [ NEC ]
