DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ
PA602T
N-CHANNEL MOS FET (6-PIN 2 CIRCUITS)
The
µ
PA602T is a mini-mold device provided with two
MOS FET circuits. It achieves high-density mounting and
saves mounting costs.
PACKAGE DIMENSIONS (in millimeters)
0.65
+0.1
–0.15
0.32
+0.1
–0.05
0.16
+0.1
–0.06
FEATURES
• Two MOS FET circuits in package the same size as
SC-59
• Complement to
µ
PA603T
• Automatic mounting supported
2.8 ±0.2
1.5
0 to 0.1
0.95
1.9
0.95
0.8
1.1 to 1.4
2.9 ±0.2
PIN CONNECTION (Top view)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 ˚C)
PARAMETER
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)
Total Power Dissipation
Channel Temperature
Storage Temperature
SYMBOL
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
*
P
T
T
ch
T
stg
RATINGS
50
±20
100
200
300 (Total)
150
–55 to +150
UNIT
V
V
mA
mA
mW
˚C
˚C
*
PW
≤
10 ms, Duty Cycle
≤
50 %
Document No. G11249EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
©
1996
NEC [ NEC ]
