DATA SHEET
SILICON TRANSISTOR
µ
PA807T
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
(WITH BUILT-IN 2 ELEMENTS) SUPER MINI MOLD
FEATURES
• Low Current, High Gain
|S
21e
|
2
= 9 dB TYP. @V
CE
= 2 V, I
C
= 7 mA, f = 2 GHz
|S
21e
|
2
= 8.5 dB TYP. @V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz
• A Super Mini Mold Package Adopted
• Built-in 2 Transistors (2
×
2SC5179)
2.0±0.2
PACKAGE DRAWINGS
(Unit: mm)
2.1±0.1
1.25±0.1
1.3
ORDERING INFORMATION
PART NUMBER
QUANTITY
Loose products
(50 PCS)
Taping products
(3 KPCS/Reel)
PACKING STYLE
Embossed tape 8 mm wide. Pin 6
(Q1 Base), Pin 5 (Q2 Base), Pin 4
(Q2 Emitter) face to perforation
side of the tape.
0.65
2
µ
PA807T
µ
PA807T-T1
0.65
3
0.9±0.1
pcs.)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
PARAMETER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
T
RATING
5
3
2
10
30 in 1 element
60 in 2 elements
Junction Temperature
Storage Temperature
T
j
T
stg
150
–65 to +150
°C
°C
UNIT
V
V
V
mA
mW
PIN CONFIGURATION (Top View)
6
Q
1
0 to 0.1
NEC Sales Representative. (Unit sample quantity is 50
5
4
Q
2
1
2
3
PIN CONNECTIONS
1. Collector (Q1) 4. Emitter (Q2)
2. Emitter (Q1)
5. Base (Q2)
3. Collector (Q2) 6. Base (Q1)
This device uses radio frequency technology. Take due precautions to protect it from excessive input levels such as static electricity.
Document No. P12153EJ2V0DS00 (2nd edition)
(Previous No. ID-3641)
Date Published November 1996 N
Printed in Japan
©
©
0.15
+0.1
–0
Remark
If you require an evaluation sample, please contact an
0.7
4
5
0.2
+0.1
–0
1
6
X Y
1995
1994
NEC [ NEC ]
