1.2 GHz BANDWIDTH LOW
NOISE SILICON MMIC AMPLIFIER
FEATURES
• WIDE BANDWIDTH:
1200 MHz at 3 dB Point for UPC1676G
1300 MHz at 3 dB Point for UPC1676B, UPC1676P
• HIGH POWER GAIN:
22 dB TYP AT f = 500 MHz
• HIGH ISOLATION
• SINGLE POWER SUPPLY:
V
CC
= 5 V
• INPUT/OUTPUT MATCHED TO 50
Ω
• AVAILABLE IN TAPE AND REEL (UPC1676G)
Gain, GS (dB)
20
G
P
30
UPC1676B
UPC1676G
UPC1676P
UPC1676G
NOISE FIGURE AND GAIN
vs. FREQUENCY AND VOLTAGE
V
CC
= 5.5 V
5.0 V
4.5 V
10
V
CC
= 5.5 V
10
NF
5.0 V
4.5 V
5
0
60
100
200
500
1000
0
2000
DESCRIPTION
The UPC1676 is a silicon monolithic integrated circuit de-
signed for wide-band amplifiers covering the VHF to UHF
bands. The series is available in two package styles: a surface
mount package (UPC1676G), and an 8 lead ceramic flat
package (UPC1676B). Also available in chip form (UPC1676P).
NEC's stringent quality assurance and test procedures en-
sure the highest reliability and performance.
Frequency, f (MHz)
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C, V
CC
= 5 V, f = 500 MHz)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
I
CC
G
S
P
SAT
BW
NF
RL
IN
RL
OUT
ISOL
R
TH(J-C)
PARAMETERS AND CONDITIONS
Supply Current
Small Signal Gain
Saturated Output Power
Bandwidth 3 dB down from gain at 100 MHz
Noise Figure
Input Return Loss
Output Return Loss
Isolation
Thermal Resistance (Junction to Case)
UNITS
mA
dB
dBm
MHz
dB
dB
dB
dB
°C/W
18
10
24
UPC1676B
1
B08
MIN
14
18
3.5
TYP MAX
19
20
5.5
4.5
21
13
28
50
6
9
6
24
24
22
UPC1676G
39
MIN
14
19
3
TYP MAX
19
22
5
4.5
12
9
28
24
6
24
24
UPC1676P
CHIP
MIN
14
19
3
TYP MAX
19
22
5
4.5
21
13
28
6
24
24
1000 1300
1000 1200
1000 1300
Note:
1. Case must be connected to GND for stable RF operation and optimum thermal dissipation.
California Eastern Laboratories
Noise Figure, NF (dB)
NEC [ NEC ]
