2.5 GHz SILICON MMIC
WIDE-BAND AMPLIFIER
FEATURES
30
UPC2709T
UPC2712T
GAIN vs. FREQUENCY
• WIDE FREQUENCY RESPONSE:
2.5 GHz
• HIGH GAIN:
23 dB (UPC2709T)
Gain, G
s
(dB)
•
SATURATED OUTPUT POWER:
+11.5 dBm (UPC2709T)
• INTERNAL CURRENT REGULATION MINIMIZES GAIN
CHANGE OVER TEMPERATURE
• 5 V SINGLE SUPPLY VOLTAGE
• SUPER SMALL PACKAGE
•
TAPE AND REEL PACKAGING OPTION AVAILABLE
10
0
0.5
1.0
1.5
2.0
2.5
3.0
25
UPC2709
20
UPC2712
15
DESCRIPTION
The UPC2709T and UPC2712T are Silicon Monolithic inte-
grated circuits manufactured using the NESAT III process.
These devices are suitable as buffer amplifiers for wide-band
applications. They are designed for low cost gain stages in
cellular radios, GPS receivers, DBS tuners, PCN, and test/
measurement equipment.
NEC's stringent quality assurance and test procedures en-
sure the highest reliability and performance.
Frequency, f (GHz)
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C, f = 1 GHz, V
CC
= 5
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
I
CC
G
S
f
U
∆G
S
P
SAT
P
1dB
NF
RL
IN
RL
OUT
ISOL
∆G
T
R
TH
PARAMETERS AND CONDITIONS
Circuit Current (no signal)
Small Signal Gain
Upper Limit Operating Frequency
(The gain at f
U
is 3 dB down from the gain at 0.1 GHz)
Gain Flatness, f = 0.1 ~ 1.8 GHz
f = 0.1 ~ 2.0 GHz
Saturated Output Power
Output Power at 1 dB Compression Point
Noise Figure
Input Return Loss
Output Return Loss
Isolation
Gain -Temperature Coefficient
Thermal Resistance (Junction to Ambient)
UNITS
mA
dB
GHz
dB
dBm
dBm
dB
dB
dB
dB
dB/°C
°C/W
V)
UPC2709T
T06
MIN
19
21
2.0
TYP
25
23
2.3
±1.0
9
11.5
7.5
5
7
7
26
10
10
31
-0.002
200
6.5
9
10
28
0
MAX
32
26.5
MIN
9
18
2.2
UPC2712T
T06
TYP
12
20
2.6
±0.8
3
-2.5
4.5
12
13
33
-0.003
200
6
MAX
15
23.5
California Eastern Laboratories
NEC [ NEC ]
