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UPC2758T-E3 参数 Datasheet PDF下载

UPC2758T-E3图片预览
型号: UPC2758T-E3
PDF下载: 下载PDF文件 查看货源
内容描述: 3 V ,硅MMIC频率转换器 [3 V, SILICON MMIC FREQUENCY CONVERTER]
分类和应用: 转换器射频和微波射频上变频器射频下变频器微波上变频器微波下变频器
文件页数/大小: 4 页 / 45 K
品牌: NEC [ NEC ]
 浏览型号UPC2758T-E3的Datasheet PDF文件第2页浏览型号UPC2758T-E3的Datasheet PDF文件第3页浏览型号UPC2758T-E3的Datasheet PDF文件第4页  
3 V, SILICON MMIC
FREQUENCY CONVERTER
FEATURES
• WIDE BAND OPERATION UP TO 2.5 GHz
• LOW VOLTAGE OPERATION:
2.7 V Minimum
• LOW POWER CONSUMPTION:
15 mW (UPC2757T)
Conversion Gain (dB)
UPC2757T
UPC2758T
CONVERSION GAIN vs. LO FREQUENCY
V
CC
= 3 V, LO Power = -5 dBm
RF Above LO
25
• POWER SAVE FUNCTION
• SUPER SMALL PACKAGE
• TAPE AND REEL PACKAGING OPTION AVAILABLE
200 MHz IF
20
UPC2758T
400 MHz IF
UPC2757T
15
DESCRIPTION
The UPC2757T and UPC2758T are L-Band Frequency Con-
verters manufactured using the NESAT III MMIC process.
These products consist of a double balanced mixer, IF ampli-
fier and LO buffer amplifier. The UPC2757T is designed for
low power consumption while the UPC2758T is designed for
low distortion. Both devices operate on a 3 volt supply voltage
making them ideal for portable hand held cellular, GPS, PCN
and wireless LAN applications.
NEC's stringent quality assurance and test procedures en-
sure the highest reliability and performance.
10
5
0
500
1000
1500
2000
2500
LO Frequency (MHz)
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C, V
CC
= 3 V, V
PS
= 3 V, P
LO
= -10 dBm)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
I
CC
f
RF
PARAMETERS AND CONDITIONS
Circuit Current,
V
PS
= 3 V
V
PS
= 0.5 V
UNITS
mA
µA
MIN
3.7
UPC2757T
T06
TYP
5.6
0.1
MAX
7.7
MIN
6.6
UPC2758T
T06
TYP
11
0.1
MAX
14.8
RF Operating Frequency Range
(The conversion gain at f
RF
is not more than 3 dB down
from the gain at f
RF
= 800 MHz, f
IF
= 130 MHz)
IF Operating Frequency Range
(The conversion gain at f
IF
is not more than 3 dB down from
the gain at f
RF
= 800 MHz, f
IF
= 130 MHz)
Conversion Gain
1
, f
RF
= 800 MHz, f
IF
= 130 MHz
f
RF
= 2.0 GHz, f
IF
= 250 MHz
Noise Figure,
f
RF
= 800 MHz, f
IF
= 130 MHz
f
RF
= 2.0 GHz, f
IF
= 250 MHz
GHz
0.1
2.0
0.1
2.0
f
IF
MHz
dB
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
°C/W
°C/W
20
12
10
15
13
10
13
-3
-8
0
-35
-23
300
18
16
13
16
20
16
14
19
17
9
13
+1
-3.5
5
-30
-15
300
22
20
12
15
CG
NF
P
SAT
P
IdB
OIP
3
ISO
R
TH (J-A)
Saturated Output Power
2
,f
RF
= 800 MHz, f
IF
= 100 MHz
Output Power at 1dB
f
RF
= 800 MHz
compression point
f
IF
= 100 MHz
Output 3rd Order Intercept Point, (SSB) P
LO
= -10 dBm
f
RF
= 0.8~2.0 GHz, f
IF
= 100 MHz
LO Leakage, f
LO
= 0.8 ~2.0 GHz
at RF pin
at IF pin
Thermal Resistance (Junction to Ambient)
Free Air
Mounted on a 50 x 50 x 1.6 mm epoxy glass PWB
620
230
620
230
Notes:
1. P
RF
= -40 dBm.
2. P
RF
= -10 dBm.
California Eastern Laboratories