DATA SHEET
BIPOLAR ANALOG INTEGRATED CIRCUITS
µ
PC8128TB,
µ
PC8151TB,
µ
PC8152TB
SILICON MMIC LOW CURRENT AMPLIFIERS
FOR CELLULAR/CORDLESS TELEPHONES
DESCRIPTION
The
µ
PC8128TB,
µ
PC8151TB and
µ
PC8152TB are silicon monolithic integrated circuits designed as buffer
amplifiers for cellular or cordless telephones. These amplifiers can realize low current consumption with external
chip inductor (eg 1005 size) which can not be realized on internal 50
Ω
wideband matched IC. These low current
amplifiers operate on 3.0 V.
These ICs are manufactured using NEC’s 20 GHz f
T
NESAT™ III silicon bipolar process. This process uses
silicon nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution
and prevent corrosion/migration. Thus, these ICs have excellent performance, uniformity and reliability.
FEATURES
• Supply voltage
• Low current consumption
: V
CC
= 2.4 to 3.3 V
:
µ
PC8128TB
; I
CC
= 2.8 mA TYP. @V
CC
= 3.0 V
; I
CC
= 4.2 mA TYP. @V
CC
= 3.0 V
; I
CC
= 5.6 mA TYP. @V
CC
= 3.0 V
; P
O(1 dB)
=
−4.0
dBm TYP. @f = 1 GHz
; P
O(1 dB)
= +2.5 dBm TYP. @f = 1 GHz
; P
O(1 dB)
=
−4.5
dBm TYP. @f = 1 GHz
; G
P
= 23 dB TYP. @f = 1 GHz
; ISL = 39 dB TYP. @f = 1 GHz
; ISL = 38 dB TYP. @f = 1 GHz
; ISL = 40 dB TYP. @f = 1 GHz
µ
PC8151TB
µ
PC8152TB
• High efficiency
:
µ
PC8128TB
µ
PC8151TB
µ
PC8152TB
• Power gain
• Excellent isolation
:
µ
PC8128TB, 8151TB ; G
P
= 12.5 dB TYP. @f = 1 GHz
µ
PC8152TB
:
µ
PC8128TB
:
µ
PC8151TB
:
µ
PC8152TB
• Operating frequency
• Light weight
: 100 to 1 900 MHz (Output port LC matching)
: 7 mg (Standard value)
• High-density surface mounting : 6-pin super minimold package (2.0
×
1.25
×
0.9 mm)
APPLICATION
• Buffer Amplifiers on 800 to 1 900 MHz cellular or cordless telephones
Caution Electro-static sensitive devices
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P12549EJ3V0DS00 (3rd edition)
Date Published February 2001 N CP(K)
Printed in Japan
The mark
shows major revised points.
©
1997, 2001
NEC [ NEC ]
