DATA SHEET
MOS INTEGRATED CIRCUIT
µ
PD16808
MONOLITHIC DUAL H BRIDGE DRIVER CIRCUIT
DESCRIPTION
The
µ
PD16808 is a monolithic dual H bridge driver circuit which employing N-channel power MOS FETs for its driver
stage. By using the power MOS FETs for the output stage, saturation voltage and power consumption are substantially
improved as compared with conventional driver circuits that use bipolar transistors.
Because the dual H bridge driver circuits at the output stage are independent of each other, this IC is ideal as the driver
circuit for a 1- to 2-phase excitation bipolar driving stepping motor for the head actuator of an FDD.
FEATURES
• Low ON resistance (sum of ON resistors of top and bottom FET
S
)
R
ON1
= 1.0
Ω
TYP. (V
M
= 5.0 V)
R
ON2
= 1.5
Ω
TYP. (V
M
= 12.0 V)
• Low current consumption: I
DD
= 0.4 mA TYP.
• Four input modes independently controlling dual H bridge drivers (with 1- to 2-phase excitation selected)
• Motor voltage 12 V/5 V compatible
• Compact surface mount package: 20-pin plastic SOP (300 mil)
PIN CONFIGURATION (Top View)
C1H
C2L
V
M1
1A
PGND
1
2A
V
DD
IN
1
IN
2
IN
3
1
2
3
4
5
6
7
8
9
10
20
19
18
17
16
15
14
13
12
11
C1L
C2H
V
G
1B
PGND
2
2B
V
M2
SEL
IN
4
DGND
Document No. S12720EJ2V0DS00 (2nd edition)
Date Published September 1997 N
Printed in Japan
©
1997
NEC [ NEC ]
