DATA SHEET
MOS INTEGRATED CIRCUIT
μ
PD43256B
256K-BIT CMOS STATIC RAM
32K-WORD BY 8-BIT
Description
The
μ
PD43256B is a high speed, low power, and 262,144 bits (32,768 words by 8 bits) CMOS static RAM.
Battery backup is available. And A and B versions are wide voltage operations.
The
μ
PD43256B is packed in 28-pin PLASTIC DIP, 28-pin PLASTIC SOP and 28-pin PLASTIC TSOP (I) (8 x 13.4 mm).
Features
•
32,768 words by 8 bits organization
•
Fast access time: 70, 85, 100, 120, 150 ns (MAX.)
•
Low voltage operation (A version: V
CC
= 3.0 to 5.5 V, B version: V
CC
= 2.7 to 5.5 V)
•
Low V
CC
data retention: 2.0 V (MIN.)
•
/OE input for easy application
Part number
Access time
ns (MAX.)
Operating supply Operating ambient
voltage
V
temperature
°C
0 to 70
At operating
mA (MAX.)
45
Supply current
At standby
At data retention
μ
A (MAX.)
50
15
μ
A (MAX.)
Note1
3
2
μ
PD43256B-xxL
μ
PD43256B-xxLL
μ
PD43256B-Axx
μ
PD43256B-Bxx
Note2
70, 85
4.5 to 5.5
85, 100
Note2
, 120
Note2
3.0 to 5.5
2.7 to 5.5
100, 120, 150
Notes 1.
T
A
≤
40
°C,
V
CC
= 3.0 V
2.
Access time: 85 ns (MAX.) (V
CC
= 4.5 to 5.5 V)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. M10770EJEV0DS00 (14th edition)
Date Published June 2006 NS CP (K)
Printed in Japan
1990, 1993, 1994
NEC [ NEC ]
