DATA SHEET
MOS INTEGRATED CIRCUIT
µ
PD43256B
256K-BIT CMOS STATIC RAM
32K-WORD BY 8-BIT
Description
The
µ
PD43256B is a high speed, low power, and 262, 144 bits (32,768 words by 8 bits) CMOS static RAM.
Battery backup is available (L, LL, A, and B versions). And A and B versions are wide voltage operations.
The
µ
PD43256B is packed in 28-pin plastic DIP, 28-pin plastic SOP and 28-pin plastic TSOP (I).
Features
• 32,768 words by 8 bits organization
• Fast access time: 70, 85, 100, 120, 150 ns (MAX.)
• Wide voltage range (A version: V
CC
= 3.0 to 5.5 V, B version: V
CC
= 2.7 to 5.5 V)
• 2 V data retention
• OE input for easy application
Operating
supply voltage
V
4.5 to 5.5
Operating
temperature
°C
0 to 70
Standby
supply current
µ
A (MAX.)
50
15
3.0 to 5.5
2.7 to 5.5
Data retention
supply current
Note 1
µ
A (MAX.)
3
2
Part number
Access time
ns (MAX.)
70, 85
70, 85
85, 100
Note 2
, 120
Note 2
100, 120, 150
µ
PD43256B-L
µ
PD43256B-LL
µ
PD43256B-A
µ
PD43256B-B
Note 2
Notes 1.
T
A
≤
40 ˚C, V
CC
= 3 V
2.
Access time : 85 ns (MAX.) (V
CC
= 4.5 to 5.5 V)
Version X and P
This data sheet can be applied to the version X and P. Each version is identified with its lot number. Letter X in
the fifth character position in a lot number signifies version X, letter P, version P.
JAPAN
D43256B
Lot number
The information in this document is subject to change without notice.
Document No. M10770EJ9V0DS00 (9th edition)
Date Published May 1997 N
Printed in Japan
The mark
shows major revised points.
©
1990, 1993, 1994
NEC [ NEC ]
