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UPG132G-E1 参数 Datasheet PDF下载

UPG132G-E1图片预览
型号: UPG132G-E1
PDF下载: 下载PDF文件 查看货源
内容描述: L波段单刀双掷开关 [L-BAND SPDT SWITCH]
分类和应用: 开关光电二极管
文件页数/大小: 14 页 / 113 K
品牌: NEC [ NEC ]
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DATA SHEET
GaAs INTEGRATED CIRCUIT
µ
PG132G
L-BAND SPDT SWITCH
DESCRIPTION
µ
PG132G is an L-Band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular
or cordless telephone application.
The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss.
It housed in an original 8 pin SSOP that is smaller than usual 8 pin SOP and easy to install and contributes to
miniaturizing the system.
It can be used in wide-band switching applications.
FEATURES
• Maximum transmission power :
• Low insertion loss
• High switching speed
• +3 V/0 V control voltage
• Small package
:
8 pins SSOP
:
:
0.6 W (typ.)
0.6 dB (typ.) at f = 2 GHz
30 ns
APPLICATION
• Digital cordless telephone
:
PHS, PCS, DECT etc.
• Digital hand-held cellular phone, WLAN
ORDERING INFORMATION
PART NUMBER
PACKAGE
8 pin plastic SSOP
PACKING FORM
Carrier tape width 12 mm.
QTY 2kp/Reel.
µ
PG132G-E1
For evaluation sample order, please contact your local NEC sales office.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 ˚C)
Control Voltage
Input Power
Total Power Dissipation
Operating Case Temperature
Storage Temperature
CAUTION:
V
CONT
P
in
P
tot
T
opt
T
stg
–0.6 to +6
31
0.4
–65 to +90
–65 to +150
V
dBm
W
˚C
˚C
The IC must be handled with care to prevent static discharge because its circuit is composed
of GaAs MES FET.
Document No. P10732EJ2V0DS00 (2nd edition)
Date Published April 1996 P
Printed in Japan
©
1996