DATA SHEET
GaAs INTEGRATED CIRCUIT
P
PG137GV
L-BAND SPDT SWITCH
DESCRIPTION
The
P
PG137GV is a L-Band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital
mobile communication system.
It housed in an very small 8-pin SSOP that is smaller than usual 8-pin SOP and easy to install and contributes to
miniaturizing the system.
FEATURES
• Maximum transmission power : +35 dBm min. (@ V
CONT
= +5 V/0 V)
+34 dBm typ. (@ V
CONT
= +3 V/0 V)
• Low insertion loss
: 0.55 dB typ. (@ 1 GHz)
0.65 dB typ. (@ 2 GHz)
APPLICATION
• Digital Cellular : GSM, PDC, PCN etc.
• PHS Base Station, PCS etc.
ORDERING INFORMATION
PART NUMBER
PACKAGE
8 pin plastic SSOP (175 mil)
PACKING FORM
Carrier tape width 12 mm Qty 2 kp/Reel.
P
PG137GV-E1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C)
PARAMETERS
Control Voltage 1, 2
Input Power (V
CONT
= +5 V)
Input Power (V
CONT
= +3 V)
Total Power Dissipation
Operating Temperature
Storage Temperature
SYMBOL
V
CONT1, 2
P
in
P
in
P
tot
T
opt
T
stg
RATINGS
ð0.6
to +6.0
Note
+36
+34
0.7
ð50
to +80
ð65
to +150
UNIT
V
dBm
dBm
W
°C
°C
Note
( ) stands for the case of positive control condition using the floating.
Condition 2.7
d
| V
CONT1
ð
V
CONT2
|
d
6.0 V
Caution
The IC must be handled with care to prevent static discharge because its circuit composed of
GaAs MES FET.
Document No. P13057EJ2V0DS00 (2nd edition)
Date Published November 1997 N
Printed in Japan
©
1996
NEC [ NEC ]
