DATA SHEET
GaAs INTEGRATED CIRCUIT
µ
PG158TB
L, S- BAND SPDT SWITCH
DESCRIPTION
The
µ
PG158TB is a L-band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital
cellular, cordless telephone and other L, S-band wireless application. The device can operate from 500 MHz to 2.5
GHz, having the low insertion loss. It housed in an original 6-pin super minimold package that is smaller than usual
6-pin minimold easy to install and contributes to miniaturizing the system.
FEATURES
• Low Insertion Loss: L
INS
= 0.3 dB TYP. @V
CONT
= +3.0 V/0 V, f = 1 GHz
L
INS
= 0.4 dB TYP. @V
CONT
= +3.0 V/0 V, f = 2 GHz
L
INS
= 0.5 dB TYP. @V
CONT
= +3.0 V/0 V, f = 2.5 GHz
• High isolation: ISL = 27 dB TYP. @V
CONT
= +3.0 V/0 V, f = 0.5 to 2 GHz
• Small 6-pin super minimold package (Size: 2.0
×
1.25
×
0.9 mm)
APPLICATIONS
• L, S-band digital cellular or cordless telephone
• PCS, WLAN, WLL and Bluetooth applications
ORDERING INFORMATION
Part Number
Marking
G1M
Package
6-pin super minimold
Supplying Form
Embossed tape 8 mm wide.
Pin 1, 2, 3 face to tape perforation side.
Qty 3 kp/reel.
µ
PG158TB-E3
Remark
To order evaluation samples, please contact your local NEC sales office. (Part number for sample
order:
µ
PG158TB)
Caution The IC must be handled with care to prevent static discharge because its circuit is composed of
GaAs MES FET.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P14267EJ2V0DS00 (2nd edition)
Date Published November 1999 N CP(K)
Printed in Japan
The mark
shows major revised points.
©
1999
NEC [ NEC ]
