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UPG2009TB-E3 参数 Datasheet PDF下载

UPG2009TB-E3图片预览
型号: UPG2009TB-E3
PDF下载: 下载PDF文件 查看货源
内容描述: L波段高功率SPDT开关 [L-BAND HIGH POWER SPDT SWITCH]
分类和应用: 射频和微波开关射频开关微波开关光电二极管高功率电源
文件页数/大小: 10 页 / 80 K
品牌: NEC [ NEC ]
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DATA SHEET
GaAs INTEGRATED CIRCUIT
µ
PG2009TB
L-BAND HIGH POWER SPDT SWITCH
DESCRIPTION
The
µ
PG2009TB is an L-band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital
cellular or cordless telephone application. The device can operate from 500 MHz to 2.5 GHz, having the low insertion
loss and high isolation by 2.8 V control voltage.
FEATURES
• Low insertion loss
• High isolation
• High power
: L
INS
= 0.25 dB TYP. @ V
cont1/2
= 2.8 V/0 V, f = 1.0 GHz
L
INS
= 0.30 dB TYP. @ V
cont1/2
= 2.8 V/0 V, f = 2.0 GHz
: ISL = 28 dB TYP. @ V
cont1/2
= 2.8 V/0 V, f = 2.0 GHz
: P
in (0.1dB)
= 34 dBm TYP. @ V
cont1/2
= 2.8 V/0 V, f = 1.0 GHz
• 6-pin super minimold package (2.0
×
1.25
×
0.9 mm)
APPLICATION
• L-band digital cellular or cordless telephone
• Buletooth
TM
, W-LAN and WLL applications
ORDERING INFORMATION
Part Number
Package
6-pin super minimold
Marking
G2U
Supplying Form
Embossed tape 8 mm wide
Pin 1, 2, 3 face the perforation side of the tape
Qty 3 kpcs/reel
µ
PG2009TB-E3
Remark
To order evaluation samples, contact your nearby sales office.
Part number for sample order:
µ
PG2009TB
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PG10191EJ02V0DS (2nd edition)
Date Published July 2004 CP(K)
Printed in Japan
The mark
shows major revised points.
NEC Compound Semiconductor Devices, Ltd. 2002, 2004