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HY62LF16804A-SMI 参数 Datasheet PDF下载

HY62LF16804A-SMI图片预览
型号: HY62LF16804A-SMI
PDF下载: 下载PDF文件 查看货源
内容描述: 512Kx16bit全CMOS SRAM [512Kx16bit full CMOS SRAM]
分类和应用: 静态存储器
文件页数/大小: 10 页 / 149 K
品牌: NEL [ NEL FREQUENCY CONTROLS,INC ]
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HY62LF16804A Series
512Kx16bit full CMOS SRAM
Document Title
512K x16 bit 2.5V Super Low Power Full CMOS slow SRAM
Revision History
Revision No
04
History
Initial Revision History Insert
Revised
- Reliability Spec Deleted
Change AC Characteristics
- tCLZ : 10/10/20 ---> 10/10/10
- tBLZ : 5/5/5
---> 10/10/10
Part Number is changed
- HY62LF16803A --> HY62LF16804A
Marking Instruction is inserted
Test Condition Changed
- I
LO
/ I
SB
/ I
SB1
/ V
DR
/ I
CCDR
Marking Istruction Inserted
Change Logo
- Hyundai
à
Hynix
Change DC Parameter
- Isb1(LL) : 30uA
à
- Isb1(Typ) : 8uA
à
- Icc1(1us) : 5mA
à
Change Data Retention
- IccDR(LL) : 25uA
à
Change AC Parameter
- tOE
: 40ns
à
25uA
1uA
4mA
15uA
35ns@70ns
Draft Date
Jul.02.2000
Remark
Preliminary
05
Oct.23.2000
Preliminary
06
Nov.13.2000
Preliminary
07
08
Dec.5.2000
Dec.16.2000
Preliminary
Preliminary
09
Apr.28.2001
10
Jan.28.2002
This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc not assume any
responsibility for use of circuits described. No patent licenses are implied.
Rev.10/Jan. 2002
Hynix Semiconductor