欢迎访问ic37.com |
会员登录 免费注册
发布采购

OD-08JS17DL 参数 Datasheet PDF下载

OD-08JS17DL图片预览
型号: OD-08JS17DL
PDF下载: 下载PDF文件 查看货源
内容描述: 高精度,低功耗,快速热身SC切割OCXO在20×20 mm的通孔封装 [Precision, Low Power Consumption, Fast Warm-up SC-cut OCXO in 20x20 mm Through Hole Package]
分类和应用: 石英晶振恒温晶体振荡器
文件页数/大小: 3 页 / 38 K
品牌: NEL [ NEL FREQUENCY CONTROLS,INC ]
 浏览型号OD-08JS17DL的Datasheet PDF文件第1页浏览型号OD-08JS17DL的Datasheet PDF文件第3页  
CRYSTAL OSCILLATORS
OD-X8JXXXXX Series
Parameter
Symb
Absolute Maximum Ratings
Vcc
Input Break
Down Voltage
Ts
Storage temper.
Vc
Control Voltage
Electrical
F
Frequency
Frequency stability
∆F/F
Aging
Allan Variance
SSB Phase Noise
Condition
Min
-0.5
-40
-1
8
vs. Temp.
vs. Supply
per day
per year
.1s to 10s
1Hz
10 Hz
100 Hz
1 KHz
10 KHz
After 30 minutes
worst direction
4.75
3.15
10.000
±50
1
5E-10
1E-7
1E-11
-90
-120
-150
-153
-160
Typ
Max
5.5
85
7
160
2
Unit
V
°C
V
MHz
ppb
ppb/V
Data Sheet 0635H
Note
1*
See chart below
after 30 days
5E-8 available2*
All parameters for 10 MHz
dBc/Hz
3*
Retrace
G-sensitivity
Input Voltage
Power consumption
Vcc
P
steady state, 25°C
W
Standard Operating
steady state, -30°C
Temperature, for Op
start-up @ -30°C
0.7
Temp. 85 °C ad 20%
Subharmonics
-45
dBc
At Higher Frequencies
Spectral Purity
Spurious
-80
Harmonics/Sine
-35
-30
10KOhm//15pF (HCMOS/TTL), 50 Ohm (Sinewave)
Load
to 0.1ppm accuracy
30
45
s
Warm-up time
τ
3.3V HCMOS/TTL compatible or Sinewave (+7± 3) dBm
Output Waveform
Vc
0
Vref
V
Control voltage
from nominal F
±0.5
±1
ppm
Pull range
Monotonic, posit
0.4
ppm/V
Deviation slope
Vc0
@25°C, Fnom.
Vref/2-1 Vref/2 Vref/2+1
V
Setability
Environmental and Mechanical
-30°C to 70°C Standard, Other options – see chart below
Operating temp. range
Per MIL-STD-202, 30G, 11ms
Mechanical Shock
Per MIL-STD-202, 5G to 2000 Hz
Vibration
260°C for 10s Max leads only
Soldering Conditions
Electrical Connections
Pin #1-Vc ; Pin#2 – Vref; Pin #3 – Vcc; Pin #4- Output ; Pin #5- GND;
Pin Out
Notes:
1* Higher frequencies can be achieved either by using higher frequency crystals or by low noise analog harmonic
multiplication. Both methods have advantages and drawbacks. If lowest possible phase noise on the noise floor is most important
– high frequency crystal will be used. If phase noise close to the carrier and aging are more important – multiplication will be
used. Please consult factory for your specific requirement.
2* Aging rate is usually proportional to the operating frequency, unless higher frequency is achieved by multiplication.
Keep it in mind while specifying aging.
3* Phase noise deteriorates with frequencies going higher. If analog multiplication is used to achieve higher frequency
the phase noise roughly follows the formula of additional 20LogN, where N is a multiplication factor across entire frequency
offset range. If higher frequency is achieved by using higher frequency crystal phase noise close to the carrier deteriorates due to
the lower Q of the crystal and is usually worse, compared to multiplied solution. On the noise floor, however it remains more or
less the same. This design usually starts utilizing multiplication techniques in the range of 25 MHz to 35 MHz.
357 Beloit Street, P.O. Box 457, Burlington, WI 53105-0457 U.S.A. Phone 262/763-3591 FAX 262/763-2881
Email:
nelsales@nelfc.com
www.nelfc.com
5.0
3.3
0.125
0.35
0.5
-50
±10
±1.0
5.25
3.45
0.15
ppb
ppb/G
V
See chart below to specify