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OD-A8HS18BL 参数 Datasheet PDF下载

OD-A8HS18BL图片预览
型号: OD-A8HS18BL
PDF下载: 下载PDF文件 查看货源
内容描述: 精密SC切割OCXO在20×20 mm的通孔封装 [Precision SC-cut OCXO in 20x20 mm Through Hole Package]
分类和应用: 石英晶振恒温晶体振荡器
文件页数/大小: 3 页 / 39 K
品牌: NEL [ NEL FREQUENCY CONTROLS,INC ]
 浏览型号OD-A8HS18BL的Datasheet PDF文件第1页浏览型号OD-A8HS18BL的Datasheet PDF文件第3页  
Data Sheet 0635G  
CRYSTAL OSCILLATORS  
OD-X8HXXXXX Series  
Parameter  
Symb  
Condition  
Min  
Typ  
Max  
Unit  
Note  
Absolute Maximum Ratings  
Vcc  
-0.5  
13.0  
V
Input Break  
Down Voltage  
Ts  
-40  
-1  
85  
9
Storage temper.  
°C  
V
Vc  
Control Voltage  
Electrical  
F
F/F  
4.8  
10.000  
±10  
160  
2
MHz  
ppb  
ppb/V  
1*  
Frequency  
Frequency stability  
vs. Temp.  
vs. Supply  
per day  
per year  
.1s to 10s  
1Hz  
10 Hz  
100 Hz  
1 KHz  
10 KHz  
See chart below  
1
5E-10  
1E-7  
1E-11  
after 30 days  
5E-8 available2*  
Aging  
Allan Variance  
SSB Phase Noise  
-90  
dBc/Hz  
3*  
-120  
-150  
-153  
-160  
After 30 minutes  
worst direction  
±10  
±1.0  
5.25  
3.45  
12.6  
1.2  
ppb  
ppb/G  
V
Retrace  
G-sensitivity  
Input Voltage  
Vcc  
P
4.75  
3.15  
11.4  
5.0  
3.3  
12.0  
0.8  
1.5  
2.5  
-50  
See chart below to specify  
steady state, 25°C  
steady state, -30°C  
start-up @ -30°C  
Subharmonics  
Spurious  
W
Standard Operating  
Temperature, for Op  
Temp. 85 °C ad 20%  
At Higher Frequencies  
Power consumption  
Spectral Purity  
3.2  
-45  
-80  
-30  
dBc  
Harmonics/Sine  
-35  
10KOhm//15pF (HCMOS/TTL), 50 Ohm (Sinewave)  
Load  
to 0.1ppm accuracy  
3
5
minutes  
3 min. at 12V  
-25dBm Harmonics at sine  
Warm-up time  
Output Waveform  
Control voltage  
Pull range  
Deviation slope  
Setability  
τ
3.3V HCMOS/TTL compatible or Sinewave (+7± 3) dBm  
Vc  
0
±0.5  
4.0  
V
ppm  
ppm/V  
V
from nominal F  
Monotonic, posit  
@25°C, Fnom.  
±1  
0.4  
2.0  
Vc0  
1.0  
3.0  
Environmental and Mechanical  
Operating temp. range  
Mechanical Shock  
Vibration  
-30°C to 70°C Standard, Other options – see chart below  
Per MIL-STD-202, 30G, 11ms  
Per MIL-STD-202, 5G to 2000 Hz  
260°C for 10s Max leads only  
Soldering Conditions  
Electrical Connections  
Pin Out  
Pin #1-Vc ; Pin#2 – Vref; Pin #3 – Vcc; Pin #4- Output ; Pin #5- GND;  
Notes:  
1* Higher frequencies can be achieved either by using higher frequency crystals or by low noise analog harmonic multiplication. Both  
methods have advantages and drawbacks. If lowest possible phase noise on the noise floor is most important – high frequency crystal will be used. If  
phase noise close to the carrier and aging are more important – multiplication will be used. Please consult factory for your specific requirement.  
2* Aging rate is usually proportional to the operating frequency, unless higher frequency is achieved by multiplication. Keep it in mind  
while specifying aging.  
3* Phase noise deteriorates with frequencies going higher. If analog multiplication is used to achieve higher frequency the phase noise  
roughly follows the formula of additional 20LogN, where N is a multiplication factor across entire frequency offset range. If higher frequency is  
achieved by using higher frequency crystal phase noise close to the carrier deteriorates due to the lower Q of the crystal and is usually worse,  
compared to multiplied solution. On the noise floor, however it remains more or less the same. This design usually starts utilizing multiplication  
techniques in the range of 25 MHz to 35 MHz.  
357 Beloit Street, P.O. Box 457, Burlington, WI 53105-0457 U.S.A. Phone 262/763-3591 FAX 262/763-2881  
Email: nelsales@nelfc.com www.nelfc.com