RoHS
10PT Series RoHS
SEMICONDUCTOR
Fig.4 Relative variation of thermal impedance
versus pulse duration
Fig.3 Average on-state current versus case
temperature
K=[Zth(j-c)/Rth(j-c)
]
IT(AV)(A)
12
10
8
1
Z
th(j-c)
DC
TO-251/TO-252
TO-220AB
α=180°
Z
th(j-a)
6
4
2
0
0.1
TO-220AB
Insulated
T
(°C)
t
(s)
case
p
0.01
1E-3
0
20 30 40 50 60 70 80 90 100 110 120 130
1E+0
5E+2
10
1E-2
1E-1
1E+1
1E+2
Fig.5 Relative variation of gate trigger current
versus junction temperature
Fig.6 Surge peak on-state current versus number
of cycles
ITSM(A)
IGT,IH,IL[T ] / IGT,IH,IL[T =25°C]
j
j
2.5
120
100
2
1.5
1
tp=10ms
One cycle
80
60
40
IGT
Tj inital=25°C
IH&IL
0.5
0
20
0
Number of cycles
T (°C)
j
1000
1
10
100
0
50
-40 -30 -20 -10
10 20 30 40
60 70 80
90
100 110
Fig.7 Non-repetitive surge peak on-state current
for a sinusoidal pulse with width tp < 10 ms,
and corresponding values of l²t
Fig.8 On-state characteristics (maximum values)
ITM(A)
ITSM(A),I²t(A²s)
1000
100
10
Tj inital=25 C
T
j=max
ITSM
100
I²t
T
j=25°C
T
j=max
Vt0=0.82V
Rd=24mΩ
t
(ms)
VTM(V)
p
10
1
1
2
10
0
1
2
3
4
5
5
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