SEMICONDUCTOR
RoHS
10PT Series
RoHS
Fig.3 Average on-state current versus case
temperature
12
10
8
α=180°
Fig.4 Relative variation of thermal impedance
versus pulse duration
K=[Z
th(j-c)
/R
th(j-c)
]
1
I
T
(AV)(A)
DC
TO-251/TO-252
TO-220AB
Z th(j-c)
6
4
2
0.1
TO-220AB
Insulated
Z th(j-a)
T case (°C)
0
0
10
20
30
40
50
60
70
80
90 100 110 120 130
0.01
1E-3
t p (s)
1E-2
1E-1
1E+0
1E+1
1E+2
5E+2
Fig.5 Relative variation of gate trigger current
versus junction temperature
2.5
2
1.5
1
0.5
0
-40 -30 -20 -10
Fig.6 Surge peak on-state current versus number
of cycles
I
TSM
(A)
120
100
tp=10ms
I
GT
,I
H
,I
L
[T
j
] / I
GT
,I
H
,I
L
[T
j
=25
°
C]
I
GT
I
H
&I
L
80
Tj inital=25°C
One cycle
60
40
20
T j (°C)
0 10 20 30 40 50 60 70 80 90 100 110
0
1
10
Number of cycles
100
1000
Fig.7 Non-repetitive surge peak on-state current
for a sinusoidal pulse with width tp < 10 ms,
Fig.8 On-state characteristics (maximum values)
and corresponding values of
l²t
I
TSM
(A),I²t(A²s)
Tj inital=25 C
1000
I
TSM
I
TM
(A)
T j=max
100
100
I²t
10
T j=25°C
10
1
2
t p (ms)
5
10
V
TM
(V)
1
0
1
2
3
4
T j=max
V
t0
=0.82V
Rd=24mΩ
5
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