SEMICONDUCTOR
10T Series
RoHS
RoHS
Fig.7 Relative variation of gate trigger current,holding
current and latching current versus junction
temperature (typical values)
I
GT
,I
H
,I
L
[T
j
] /
I
GT
,I
H
,I
L
[T
j
=25
°C
]
2.5
2.0
1.5
1.0
0.5
0.0
-40
-20
0
20
T j (°C)
I H &I L
l GT
Fig.8 Relative variation of critical rate of decrease
of main current versus (dV/dt)c (typical values)
(dI/dt)c [(dV/dt)c] /
Specified
(dI/dt)c
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
80
100
120
140
B
C
BW/CW
(dV/dt)c (V/µs)
0.1
1.0
10.0
100.0
40
60
Fig.9 Relative variation of critical rate of decrease of
main current versus junction temperature
(dI/dt)c [T
j
] / (dI/dt)c [T
j
specified]
6
5
4
3
2
1
0
T j (°C)
0
25
50
75
100
125
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