RoHS
12PT Series RoHS
SEMICONDUCTOR
Fig.1 Maximum average power dissipation versus
average on-state current
Fig.2 Average and DC on-state current versus
case temperature
IT(AV)(A)
12P(W)
14
12
DC
11 α=180°
10
9
TO-251/TO-252
TO-263/TO-220AB
10
8
8
α=180°
7
6
5
4
6
TO-220AB
Insulated
4
2
0
360°
3
2
1
T
(°C)
IT(AV)(A)
α
case
0
0
1
2
0
25
50
75
100
125
3
5
6
7
8
9
4
Fig.4 Relative variation of thermal impedance
Fig.3 Average and DC on-state current versus
ambient temperature (DPAK)
junction to case versus pulse duration
IT(AV)(A)
K=[Zth(j-c)/Rth(j-c)]
3.0
2.5
1.0
Device mounted on FR4 with
Recommended pad layout
DC
0.5
D²PAK
2.0
1.5
1.0
α=180°
DPAK
0.2
0.1
0.5
0.0
t (s)
p
T
(°C)
amb
0
25
50
75
100
125
1E+3
1E+2
1E+1
1E+0
Fig.5 Relative variation of thermal impedance
Junction to ambient versus pulse duration
(DANK)
Fig.6 Relative variation of gate trigger and
holding current versus junction
temperature for IGT=200µA
K=[Zth(j-a)/Rth(j-a)]
Device mounted on FR4 with
Recommended pad layout
IGT,IH,IL[Tj] / IGT,IH,IL[Tj=25°C]
1.00
2.0
1.8
1.6
1.4
1.2
IGT
DPAK
D²PAK
1.0
0.8
0.6
0.4
0.2
0.0
0.10
l
& IL
H
TO-220AB/IPAK
R
=1KΩ
GK
T (°C)
j
t (s)
p
0.01
1E-2
-40 -20
0
20
40
60
80 100 120 140
1E-1
1E+0
1E+1
1E+2 5E+2
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