SEMICONDUCTOR
RoHS
12T Series
RoHS
Fig.7 Non-repetitive surge peak on-state current
for a sinusoidal pulse with width tp < 10ms.
and corresponding value of l
2
t.
l
TSM
(A), l
2
t(A
2
s)
Fig.8 Relative variation of gate trigger current,holding
current and latching current versus junction
temperature (typical values).
l
GT
,
l
H
,
l
L
[T
j
] / l
GT
,l
H
,l
L
[T
j
=25°C]
2.5
T
j
initial=25°C
1000
dI/dt limitation:
50A/µs
2.0
I
GT
I
TSM
1.5
I
H
&
I
L
100
I
2
t
1.0
0.5
t
p
(ms)
10
0.01
0.10
1.00
10.00
T
j
(°C)
0.0
-40
-20
0
20
40
60
80
100
120
140
Fig.9 Relative variation of critical rate of decrease
of main current versus (dV/dt)c (typical values).
Fig.10 Relative variation of critical rate of
decrease of main current versus (dV/dt)c
(typical values).
(dI/dt)c [(dV/dt)c] /
Specified
(dI/dt)c
2.8
2.4
2.0
C
SW
B
CW/BW
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
(dI/dt)c [(dV/dt)c] /
Specified
(dI/dt)c
TW
1.6
1.2
0.8
0.4
(dV/dt)c (V/µs)
1.0
10.0
100.0
1.0
0.5
0.0
0.1
1.0
0.0
0.1
(dV/dt)c (V/µs)
10.0
100.0
Fig.11 Relative variation of critical rate of decrease
of main current versus junction temperature
Fig.12 D
2
PAK thermal resistance junction to
ambient versus copper surface under
tab (printed circuit board FR4, copper
thickness: 35µm)
(dI/dt)c
[T
j
]
(dl/dt)c [
T
j
specified ]
6
5
4
3
2
1
80
70
60
50
40
30
20
10
R
th(j-a)
(°C/W)
D
2
PAK
S(cm
2
)
0
4
8
12
16
20
24
28
32
36
40
T
j
(°C)
0
0
25
50
75
100
125
0
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