SEMICONDUCTOR
RoHS
12T Series
RoHS
Fig.1 Maximum power dissipation versus RMS on-state
current
(full
cycle)
P
(W)
16
14
12
10
8
6
4
2
0
0
1
2
3
4
Fig.2 RMS on-state current versus case temperature
(full
cycle)
I
T(RMS)
(A)
I
T(RMS)
(A)
5
6
7
8
9
10
11
12
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
TO-220AB
( insulated )
TO-220AB
TO-263
T
C
(°C)
0
25
50
75
100
125
Fig.3 RMS on-state current versus ambient
temperature (printed circuit board FR4,
copper thickness: 35µm)(full cycle)
I
T(RMS)
(A)
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
25
1E-1
D
2
PAK
(S=1cm
2
)
Fig.4 Relative variation of thermal impedance
versus pulse duration.
K=[Z
th
/R
th
]
1E+0
Z
th(j-c)
Z
th(j-a)
T
c
(°C)
50
75
100
125
1E-2
1E-3
tp(s)
1E-2
1E-1
1E+0
1E+1
1E+2
5E+2
Fig.5 On-state characteristics (maximum values).
I
100
Fig.6 Surge peak on-state current versus number
of cycles.
I
TSM
(A)
130
120
110
100
90
80
70
60
50
40
30
20
10
0
1
(A)
T
j
max.
V
to
= 0.85
V
R
d
= 35
mΩ
t=20ms
T
j
=T
j
max
Non repetitive
T
j
initial=25°C
Repetitive
T
c
=90°C
One cycle
10
T
j
=25°C
V
TM
(V)
1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Number of cycles
10
100
1000
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