SEMICONDUCTOR
RoHS
16PT Series
RoHS
Stansard SCRs, 16A
Main Features
Symbol
I
T(RMS)
V
DRM
/V
RRM
I
GT
Value
16
600 to 1000
25
Unit
A
1
1
2
3
2
3
2
2
V
mA
TO-251
(I-PAK)
(16PTxxF)
2
TO-252
(D-PAK)
(16PTxxG)
DESCRIPTION
The 16PT series of silicon controlled rectifiers are high
performance glass passivated technology, and are
suitable for general purpose applications.
Using clip assembly technology, they provide a
superior performance in surge current capabilities.
1
2
1
3
2
3
TO-220AB
(Non-lnsulated)
(16PTxxA)
TO-220AB
(lnsulated)
(16PTxxAI)
A2
A1 A2
G
2
(A2)
TO-263
(D
2
PAK)
(16PTxxH)
(G)3
1(A1)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
RMS on-state current full sine wave
(180° conduction angle )
SYMBOL
TEST CONDITIONS
TO-251/TO-252
TO-220AB/TO-263
TO-220AB insulated
Average on-state current
(180° conduction angle)
Non repetitive surge peak on-state
current
(full
cycle, T
j
initial = 25°C)
I
2
t Value for fusing
Critical rate of rise of on-state current
I
G
= 2xl
GT
, t
r
≤100ns
Peak gate current
TO-251/TO-252
TO-220AB/TO-263
TO-220AB insulated
I
TSM
I
2
t
dI/dt
I
GM
P
GM
P
G(AV)
V
DRM
V
RRM
T
stg
T
j
- 40
to
+ 150
ºC
Operating junction temperature range
- 40
to
+ 125
F = 60 Hz
T
p
= 20 µs
T
p
=20µs
T
j
=125ºC
T
j
=125ºC
F =50 Hz
F =60 Hz
t
p
= 10 ms
T
j
= 125ºC
T
j
= 125ºC
T
j
= 125ºC
T
c
=110°C
16
T
c
=86°C
T
c
=110°C
10
T
c
=86°C
t = 20 ms
t = 16.7 ms
190
200
180
50
4
10
1
600
to 1000
A
A
2
s
A/µs
A
W
W
V
A
A
VALUE
UNIT
I
T(RMS)
I
T(AV)
Maximum gate power
Average gate power dissipation
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Storage temperature range
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