RoHS
RoHS
16T Series
SEMICONDUCTOR
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUE
UNIT
Tc = 100ºC
TO-220/TO-263
16
A
IT(RMS)
RMS on-state current (full sine wave)
TO-220insulate/TO-220F (ITO-220AB) Tc = 86ºC
F =50 Hz
F =60 Hz
t = 20 ms
160
168
128
Non repetitive surge peak on-state
ITSM
A
current (full cycle, T initial = 25°C)
j
t = 16.7 ms
I2t Value for fusing
I2t
A2s
t
= 10 ms
p
Critical rate of rise of on-state current
IG = 2xlGT, tr≤100ns
Tj =125ºC
Tj =125ºC
A/µs
dI/dt
F =100 Hz
50
Tp =20 µs
Tj =125ºC
Peak gate current
IGM
PG(AV)
Tstg
4
1
A
Average gate power dissipation
W
Storage temperature range
- 40 to 150
- 40 to 125
ºC
Tj
Operating junction temperature range
ELECTRICAL CHARACTERISTICS (TJ= 25 ºC unless otherwise specified)
SNUBBERLESS and Logic level (3 quadrants)
16Txxxx
CW
QUADRANT
SYMBOL
TEST CONDITIONS
Unit
SW
BW
(1)
IGT
I - II - III
I - II - III
MAX.
MAX.
10
35
50
mA
V
VD = 12 V, RL = 33Ω
VGT
1.3
VD = VDRM, RL = 3.3KΩ
Tj = 125°C
VGD
MIN.
MAX.
MAX.
MIN.
I - II - III
0.2
40
V
(2)
IT = 500 mA
IH
mA
15
25
30
55
I - III
50
60
70
80
IG = 1.2 IGT
IL
mA
II
dV/dt(2)
VD = 67% VDRM gate open ,Tj = 125°C
,
V/µs
40
500
1000
(dV/dt)c = 0.1 V/µs
(dV/dt)c = 10 V/µs
-
-
-
-
Tj = 125°C
Tj = 125°C
Tj = 125°C
8.5
3
(dI/dt)c(2)
MIN.
A/ms
-
Without snubber
8.5
14
Note 1: Minimum lGT is guaranted at 5% of lGT max.
Note 2: For both polarities of A2 referenced to A1.
ELECTRICAL CHARACTERISTICS (TJ= 25 ºC unless otherwise specified)
Standard (4 quadrants)
16Txxxx
QUADRANT
SYMBOL
TEST CONDITIONS
UNIT
C
B
I - II - III
25
50
50
(1)
IGT
MAX.
mA
VD = 12 V, RL = 33Ω
IV
100
VGT
VGD
1.3
0.2
V
V
ALL
ALL
VD = VDRM, RL = 3.3KΩ, Tj = 125°C
IT = 500 mA
(2)
mA
IH
MAX.
MAX.
25
50
I - III - IV
40
80
60
IL
IG = 1.2 IGT
mA
120
400
II
dV/dt(2)
MIN.
MIN.
200
VD = 67% VDRM, gate open, Tj = 125°C
(dI/dt)c = 7 A/ms, Tj = 125°C
V/µs
V/µs
(dV/dt)c(2)
5
10
Page 2 of 7
www.nellsemi.com
NELLSEMI [ NELL SEMICONDUCTOR CO., LTD ]
