SEMICONDUCTOR
16T Series
RoHS
RoHS
ABSOLUTE MAXIMUM RATINGS
PARAMETER
RMS on-state current
(full
sine wave)
Non repetitive surge peak on-state
current
(full
cycle, T
j
initial = 25°C)
I
2
t Value for fusing
Critical rate of rise of on-state current
I
G
= 2xl
GT
, t
r
≤100ns
Peak gate current
Average gate power dissipation
Storage temperature range
Operating junction temperature range
SYMBOL
I
T(RMS)
TO-220insulate
I
TSM
I t
dI/dt
I
GM
P
G(AV)
T
stg
T
j
2
TEST CONDITIONS
TO-220/TO-263
T
c
= 110ºC
T
c
= 86ºC
t = 20 ms
t = 16.7 ms
VALUE
16
160
168
128
UNIT
A
F =50 Hz
F =60 Hz
t p = 10 ms
F =100 Hz
T
p
=20 µs
A
A
2
s
A/µs
A
W
ºC
T
j
=125ºC
T
j
=125ºC
T
j
=125ºC
50
4
1
- 40
to
+ 150
- 40
to
+ 125
ELECTRICAL CHARACTERISTICS
(T
J
= 25 ºC unless otherwise specified)
SNUBBERLESS and Logic level (3 quadrants)
16Txxxx
SYMBOL
I
GT(1)
V
GT
V
GD
I
H(2)
I
L
dV/dt
(2)
V
D
= V
DRM
, R
L
= 3.3KΩ
T
j
= 125°C
I
T
= 500 mA
I
-
III
I
G
= 1.2 I
GT
II
V
D
= 67% V
DRM
, gate open ,T
j
= 125°C
(dV/dt)c = 0.1 V/µs
(dI/dt)c
(2)
(dV/dt)c = 10 V/µs
Without snubber
Note
1:
Minimum
l
GT
is guaranted at
5%
of l
GT
max.
Note
2:
For
both polarities of A2 referenced to A1.
T
j
= 125°C
T
j
= 125°C
T
j
= 125°C
MIN.
MAX.
MIN.
TEST CONDITIONS
QUADRANT
SW
I
-
II
-
III
V
D
= 12 V, R
L
= 33Ω
I
-
II
-
III
I
-
II
-
III
MAX.
MIN.
MAX.
15
25
30
40
8.5
3
-
1.3
0.2
40
50
60
500
-
-
8.5
55
70
mA
80
1000
-
-
14
A/ms
V/µs
V
V
mA
MAX.
10
CW
35
BW
50
mA
Unit
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