RoHS
RoHS
16T Series
SEMICONDUCTOR
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUE
UNIT
Tc = 110ºC
Tc = 86ºC
TO-220/TO-263
IT(RMS)
RMS on-state current (full sine wave)
A
16
TO-220insulate
F =50 Hz
t = 20 ms
160
168
128
Non repetitive surge peak on-state
ITSM
A
current (full cycle, T initial = 25°C)
j
t = 16.7 ms
F =60 Hz
I2t Value for fusing
I2t
A2s
t
= 10 ms
p
Critical rate of rise of on-state current
IG = 2xlGT, tr≤100ns
A/µs
dI/dt
50
F =100 Hz
Tp =20 µs
Tj =125ºC
Tj =125ºC
Peak gate current
IGM
4
1
A
PG(AV)
Tj =125ºC
Average gate power dissipation
Storage temperature range
Operating junction temperature range
W
Tstg
Tj
- 40 to + 150
- 40 to + 125
ºC
ELECTRICAL CHARACTERISTICS (TJ= 25 ºC unless otherwise specified)
SNUBBERLESS and Logic level (3 quadrants)
16Txxxx
QUADRANT
SYMBOL
TEST CONDITIONS
Unit
SW
CW
35
BW
(1)
IGT
I - II - III
I - II - III
MAX.
MAX.
10
50
mA
V
VD = 12 V, RL = 33Ω
VGT
1.3
VD = VDRM, RL = 3.3KΩ
Tj = 125°C
VGD
MIN.
MAX.
MAX.
MIN.
I - II - III
0.2
40
V
(2)
IT = 500 mA
IH
mA
15
25
30
55
I - III
50
60
70
80
IG = 1.2 IGT
IL
mA
II
dV/dt(2)
VD = 67% VDRM gate open ,Tj = 125°C
,
V/µs
40
500
1000
(dV/dt)c = 0.1 V/µs
(dV/dt)c = 10 V/µs
-
-
-
-
Tj = 125°C
Tj = 125°C
Tj = 125°C
8.5
3
(dI/dt)c(2)
MIN.
A/ms
-
Without snubber
8.5
14
Note 1: Minimum lGT is guaranted at 5% of lGT max.
Note 2: For both polarities of A2 referenced to A1.
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