SEMICONDUCTOR
16T Series
RoHS
RoHS
ELECTRICAL CHARACTERISTICS
(T
J
= 25 ºC unless otherwise specified)
Standard (4 quadrants)
16Txxxx
SYMBOL
TEST CONDITIONS
QUADRANT
I
-
II
-
III
V
D
= 12 V, R
L
= 33Ω
IV
ALL
V
D
= V
DRM
, R
L
= 3.3KΩ, T
j
= 125°C
I
T
= 500 mA
I
G
= 1.2 I
GT
V
D
= 67% V
DRM
, gate open, T
j
= 125°C
(dI/dt)c = 7 A/ms, T
j
= 125°C
I
-
III
-
IV
II
dV/d
t(2)
(dV/dt)c
(2)
MIN.
MIN.
ALL
MAX.
MAX.
25
40
80
200
5
C
MAX.
25
50
1.3
0.2
50
60
120
400
10
V/µs
V/µs
B
50
100
mA
V
V
mA
mA
UNIT
I
GT(1)
V
GT
V
GD
I
H(2)
I
L
STATIC CHARACTERISTICS
SYMBOL
V
TM(2)
V
t0
(2)
R
d
(2)
I
DRM
I
RRM
I
TM
= 22.5 A, t
P
= 380 µs
Threshold voltage
Dynamic resistance
V
D
=
V
DRM
V
R
=
V
RRM
TEST CONDITIONS
T
j
= 25°C
T
j
= 125°C
T
j
= 125°C
T
j
= 25°C
MAX.
T
j
= 125°C
1
mA
MAX.
MAX.
MAX.
VALUE
1.55
0.85
25
5
UNIT
V
V
mΩ
µA
Note
1:
Minimum
l
GT
is guaranted at
5%
of l
GT
max.
Note
2:
For
both polarities of A2 referenced to A1.
THERMAL RESISTANCE
SYMBOL
R
th(j-c)
R
th(j-a)
Junction to case
(AC)
Junction to ambient
S
(1)
=1cm²
TO-220AB, D²PAK
TO-220AB Insulated
D²PAK
TO-220AB Insulated, TO-220AB
VALUE
1.2
2.1
45
60
UNIT
°C/W
°C/W
Note
1:
S=Copper surface under tab
PRODUCT SELECTOR
VOLTAGE
(x
x)
PART NUMBER
600
V
16TxxA-B/1 6TxxAl-B
16TxxA-BW/16TxxAl-BW
16TxxA-C/16TxxAl-C
16TxxA-CW/16TxxAl-CW
16TxxA-SW/16TxxAl-SW
16TxxH-SW
16TxxH-CW
V
V
V
V
V
V
V
800
V
V
V
V
V
V
V
V
1000
V
V
V
V
V
V
V
V
50
mA
50
mA
25
mA
35
mA
10
mA
10
mA
35
mA
Standard
Snubberless
Standard
Snubberless
Logic level
Logic level
Snubberless
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
D²PAK
D²PAK
SENSITIVITY
TYPE
PACKAGE
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