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1PT06E-T 参数 Datasheet PDF下载

1PT06E-T图片预览
型号: 1PT06E-T
PDF下载: 下载PDF文件 查看货源
内容描述: 敏感栅可控硅, 1A [Sensitive gate SCRs, 1A]
分类和应用: 可控硅
文件页数/大小: 4 页 / 189 K
品牌: NELLSEMI [ NELL SEMICONDUCTOR CO., LTD ]
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SEMICONDUCTOR
1PT Series
Sensitive gate SCRs, 1A
RoHS
RoHS
Main Features
Symbol
I
T(RMS)
V
DRM
/V
RRM
I
GT
Value
1
600 to 800
40 to
2
00
Unit
A
V
µA
DESCRIPTION
Thanks to highly sensitive triggering levels, the 1PT
series is suitable for all applications where the available
gate current is limited, such as capacitive discharge
ignitions, motor control in kitchen aids, overvoltage
crowbar protection in low power supplies among others.
Available in through-hole or surface-mount packages,
they provide an optimized performance in a limited
space area.
A2
A1
G
2
(A2)
TO-92
(1PTxxE)
(G)3
1(A1)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
RMS on-state current full sine wave
(180° conduction angle )
Average on-state current
(180° conduction angle)
Non repetitive surge peak on-state
current (full cycle, T
j
initial = 25
°
C)
I
2
t Value for fusing
Critical rate of rise of on-state current
I
G
= 2xl
GT
, t
r
≤100ns
Peak gate current
Forward peak gate power
Average gate power dissipation
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Storage temperature range
Operating junction temperature range
SYMBOL
I
T(RMS)
TEST CONDITIONS
T
c
=85ºC
VALUE
1
UNIT
A
I
T(AV)
F =50 Hz
F =60 Hz
T
c
=85ºC
t = 20 ms
t = 16.7 ms
t
p
= 10 ms
F = 60 Hz
T
p
= 20 µs
T
j
= 110ºC
T
j
= 110ºC
0.6
12
13
0.72
50
0.5
0.5
0.1
600 and 800
- 40 to + 150
A
I
TSM
I
2
t
dI/dt
I
GM
P
GM
P
G(AV)
V
DRM
V
RRM
T
stg
T
j
A
A
2
s
A/µs
A
W
W
V
T
A
=25
°
C, Pulse width≤0.1 µs
T
j
=110ºC
T
j
=25ºC
ºC
- 40 to + 110
www.nellsemi.com
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